L-NESS

Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

SiGe growth

News

1 Nov2009The 8th ESPS-NIS will be held in Como, 14-18th June 2010
7 Apr2008Il Sole 24 ORE visit the L-NESS

People

Research

SiGe islands on pit-patterned substrates

Silicon substrates patterned by the Nanoscale Device Group using electron-beam lithography and reactive-ion etching are used as templates for the growth of Ge dots by low-energy plasma-enhanced chemical vapour deposition (LEPECVD).

Ge layers on pre-patterned substrates

Multiple quantum wells for optical applications

Doped and intrinsic Ge layers

High mobility p-type modulation doped quantum wells

Virtual substrates

Relaxed graded silicon germanium buffer layers greatly extend the possibilities of the silicon germanium material system. Such a relaxed buffer layer, or virtual substrate, allows the growth of a tensile strained silicon quantum well for n-type conduction. Also, it is possible to grow compressively strained quantum wells for p-type conduction with any germanium fraction.

The traditional method of producing a virtual substrate is to linearly increase the germanium fraction x at around 10% per micron (E. A. Fitzgerald et al. Appl. Phys. Lett. 59 [7] 811-813 [1991]). LEPECVD is excellent for this purpose, since growth rates of 5-10 nms-1 can be reached. This means that a buffer which is graded at 7% per micron from pure Si to pure Ge, and capped with 2 microns of pure Ge, still takes less than one hour to grow. The threading dislocation density of such a buffer has been measured to be 1.5×105 cm-2 and the rms surface roughness is 3.2 nm (S. G. Thomas et al. J. Electron. Mater. 32 [9] 976-980 [2003]). For comparison, the threading dislocation density of a similar buffer grown by ultra-high vacuum chemical vapour deposition (UHV-CVD) is 2.1×106 cm-2 (and the rms roughness is 24 nm) but here the wafer has to be taken out of the growth system half-way through and subjected to chemical-mechanical polishing (CMP) (S. B. Samavedam et al. Appl. Phys. Lett. 73 [15] 2125-2127 [1998]).

Such structures can have excellent electrical properties (B. Rößner et al. Appl. Phys. Lett. 82 [5] 754-756 [2003], B. Rössner et al. Appl. Phys. Lett. 84 [16] 3058-3060 [2004]). These papers feature modulation-doped strained Ge channels on 70 % virtual substrates.

Facilities

LEPECVD

Low-energy plasma-enhanced chemical vapour deposition (LEPECVD) is a technique for growing high-quality epitaxial or nanocrystalline SiGe layers at high rates, with efficient use of the source materials.

Schematic of the LEPECVD system.

The original prototype LEPECVD system.

The original LEPECVD prototype was brought to the L-NESS in Como from the ETH Zürich in 2002. It can handle wafer sizes up to 4” (100 mm), and smaller sizes by means of suitable Mo adaptor plates.

LG2: Second generation LEPECVD

The second generation LEPECVD system (LG2).

This system was developed, built and optimized at the L-NESS. It can take wafer sizes up to 8” (200 mm).

X-ray diffraction

The group is equipped with a low-resolution double-crystal x-ray diffractometer, which is used to measure the lattice constants of epitaxial SiGe layers and to thereby characterize their composition, strain and thickness.

Atomic force microscopy

The group is equipped with a Veeco Innova atomic force microscope. The microscope is used to characterize the surface morphology of as-grown SiGe layers, and to image etch pits following defect etching.

He cryostat

The group is equipped with a Cryogenic cryogen free (i.e., a closed cycle liquid helium-4) magnet system to 7.5 T with an integrated variable temperature insert. The lowest temperature which can be reached by this cryostat is about 1.4 K. The cryostat is connected to a transport measurement system comprised of digital source meters, multi meters, preamplifiers, function generators, an oscilloscope, and an acquisition board. This system is used for the characterization of high-mobility heterostructures.

Publications

  1. G. Matmon, D. J. Paul, L. Lever, M. Califano, Z. Ikonić, R. W. Kelsall, J. Zhang, D. Chrastina, G. Isella, H. von Känel, E. Müller, and A. Neels: Si/SiGe quantum cascade superlattice designs for terahertz emission, J. Appl. Phys. 107, 053109 (2010).
  2. C. Lange, N. S. Köster, S. Chatterjee, H. Sigg, D. Chrastina, G. Isella, H. von Känel, B. Kunert, and W. Stolz: A comparison of ultrafast carrier thermalization in GaxIn1-xAs and Ge quantum wells, Phys. Rev. B 81, 045320 (2010).
  3. S. Bietti, C. Somaschini, S. Sanguinetti, N. Koguchi, G. Isella, and D. Chrastina: Fabrication of high efficiency III-V quantum nanostructures at low thermal budget on Si, Appl. Phys. Lett. 95, 241102 (2009).
  4. S. Bietti, S. Sanguinetti, C. Somaschini, N. Koguchi, G. Isella, D. Chrastina, and A. Fedorov: Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate, IOP Conf. Ser.: Mat. Sci. Eng. 6, 012009 (2009).
  5. T. Moiseev, G. Isella, D. Chrastina, and C. Cavallotti: Langmuir probe plasma parameters and kinetic rates in a Ar-SiH4-H2 plasma during nc-Si films deposition for photovoltaic applications, J. Phys. D: Appl. Phys. 42, 225202 (2009).
  6. C. Cavallotti, M. Rondanini, T. Moiseev, D. Chrastina, and G. Isella: An investigation of the gas phase and surface chemistry active during the PECVD of nc-silicon: A detailed model of the gas phase and surface chemistry, ECS Transactions 25, 107 (2009).
  7. T. Moiseev, D. Chrastina, G. Isella, and C. Cavallotti: Plasma composition and kinetic reaction rates in a LEPECVD Ar-SiH4-H2 plasma during nc-Si films deposition for photovoltaic applications, ECS Transactions 25, 1065 (2009).
  8. F. Pezzoli, E. Bonera, M. Bollani, S. Sanguinetti, E. Grilli, M. Guzzi, G. Isella, D. Chrastina, and H. von Känel: Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers, Acta Phys. Pol. A 116, 78 (2009).
  9. A. Trita, F. Bragheri, I. Cristiani, V. Degiorgio, D. Chrastina, D. Colombo, G. Isella, H. von Känel, F. Gramm, E. Müller, M. Döbeli, E. Bonera, R. Gatti, F. Pezzoli, E. Grilli, M. Guzzi, and L. Miglio: Impact of misfit dislocations on wavefront distortion in Si/SiGe/Si optical waveguides, Opt. Commun. 282, 4716 (2009).
  10. A. Calloni, R. Ferragut, F. Moia, A. Dupasquier, G. Isella, D. Marongiu, G. Norga, A. Federov, and D. Chrastina: Positron annihilation studies of defects in Si1-xGex/SOI heterostructures, phys. stat. sol. (c) 6, 2304 (2009).
  11. R. Sordan, A. Miranda, F. Traversi, D. Colombo, D. Chrastina, G. Isella, M. Masserini, L. Miglio, K. Kern, and K. Balasubramanian: Vertical arrays of nanofluidic channels fabricated without nanolithography, Lab Chip 9, 1556 (2009).
  12. E. Poliani, C. Somaschini, S. Sanguinetti, E. Grilli, M. Guzzi, A. Le Donne, S. Binetti, D. Chrastina, and G. Isella: Tuning by means of laser annealing of electronic and structural properties of nc-Si/a-Si:H, Mat. Sci. Eng. B 159-160, 31 (2009).
  13. J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri, and H. von Känel: Ultra low dark current Ge/Si(100) photodiodes with low thermal budget, Appl. Phys. Lett. 94, 201106 (2009).
  14. C. Lange, N. S. Köster, S. Chatterjee, H. Sigg, D. Chrastina, G. Isella, H. von Känel, M. Schäfer, M. Kira, and S. W. Koch: Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion, Phys. Rev. B 79, 201306(R) (2009).
  15. M. Bonfanti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, H. von Känel, and H. Sigg: Direct-gap related optical transitions in Ge/SiGe quantum wells with Ge-rich barriers, Physica E 41, 972 (2009).
  16. T. Moiseev, D. Chrastina, G. Isella, and C. Cavallotti: Threshold ionization mass spectrometry in the presence of excited silane radicals, J. Phys. D: Appl. Phys. 42, 072003 (2009).
  17. M. Virgilio, M. Bonfanti, D. Chrastina, A. Neels, G. Isella, E. Grilli, M. Guzzi, G. Grosso, H. Sigg, and H. von Känel: Polarization-dependent absorption in Ge/SiGe multiple quantum wells: theory and experiment, Phys. Rev. B 79, 075323 (2009).
  18. P. L. Novikov, A. Le Donne, S. Cereda, L. Miglio, S. Pizzini, S. Binetti, M. Rondanini, C. Cavallotti, D. Chrastina, T. Moiseev, H. von Känel, G. Isella, and F. Montalenti: Crystallinity and microstructure in si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments, Appl. Phys. Lett. 94, 051904 (2009).
  19. F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, and G. Bauer: Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures, Mat. Sci. Semicond. Process. 11, 279 (2008).
  20. D. Chrastina, A. Neels, M. Bonfanti, M. Virgilio, G. Isella, E. Grilli, M. Guzzi, G. Grosso, H. Sigg, and H. von Känel: Ge/SiGe multiple quantum wells for optical applications.In IEEE 5th Int. Conf. Group IV Photonics, 194-196 (2008).
  21. J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, and H. von Känel: High speed Ge photodetector integrated on silicon-on-insulator operating at very low bias voltage.In IEEE 5th Int. Conf. Group IV Photonics, 164-166 (2008).
  22. G. Isella, G. Matmon, A. Neels, E. Müller, M. Califano, D. Chrastina, H. von Känel, L. Lever, Z. Ikonić, R. W. Kelsall, and D. J. Paul: SiGe/Si quantum cascade structures deposited by low-energy plasma-enhanced CVD.In IEEE 5th Int. Conf. Group IV Photonics, 29-31 (2008).
  23. J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, and H. von Känel: Ge/Si (100) heterojunction photodiodes fabricated from material grown by low-energy plasma-enhanced chemical vapour deposition, Thin Solid Films 517, 380 (2008).
  24. D. J. Paul, G. Matmon, L. Lever, Z. Ikonić, R. W. Kelsall, D. Chrastina, G. Isella, H. von Känel, E. Müller, and A. Neels: SiGe/Si bound-to-continuum terahertz quantum cascade emitters.In SiGe, Ge, and Related Compounds, 865-874 (2008).
  25. S. L. Rumyantsev, K. Fobelets, D. Veksler, T. Hackbarth, and M. S. Shur: Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation, Semicond. Sci. Technol. 23, 105001 (2008).
  26. M. Bonfanti, E. Grilli, M. Guzzi, M. Virgilio, G. Grosso, D. Chrastina, G. Isella, H. von Känel, and A. Neels: Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers, Phys. Rev. B 78, 041407(R) (2008).
  27. R. Sordan, A. Miranda, J. Osmond, D. Colombo, D. Chrastina, G. Isella, and H. von Känel: Gate-controlled rectifying barrier in a two-dimensional hole gas, Nanotechnology 19, 335201 (2008).
  28. M. Rondanini, C. Cavallotti, D. Ricci, D. Chrastina, G. Isella, T. Moiseev, and H. von Känel: An experimental and theoretical investigation of a magnetically confined dc plasma discharge, J. Appl. Phys. 104, 013304 (2008).
  29. A. Cavallini and D. Cavalcoli: Nanostructures in silicon investigated by atomic force microscopy and surface photovoltage spectroscopy, Scanning 30, 358 (2008).
  30. D. J. Paul, G. Matmon, L. Lever, Z. Ikonić, R. W. Kelsall, D. Chrastina, G. Isella, and H. von Känel: Si/SiGe bound-to-continuum quantum cascade terahertz emitters, Proc. SPIE Int. Soc. Opt. Eng. 6996, 69961C (2008).
  31. F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, and G. Bauer: Phonon strain shift coefficients in Si1-xGex alloys, J. Appl. Phys. 103, 093521 (2008).
  32. M. Stoffel, A. Malachias, T. Merdzhanova, F. Cavallo, G. Isella, D. Chrastina, H. von Känel, A. Rastelli, and O. G. Schmidt: SiGe wet chemical etchants with high compositional selectivity and low strain sensitivity, Semicond. Sci. Technol. 23, 085021 (2008).
  33. A. Le Donne, S. Binetti, G. Isella, and S. Pizzini: Structural homogeneity of nc-Si films grown by Low-Energy PECVD, Electrochem. Solid St. 11, P5 (2008).
  34. A. Le Donne, S. Binetti, G. Isella, B. Pichaud, M. Texier, M. Acciarri, and S. Pizzini: Structural characterization of nc-Si films grown by low-energy PECVD on different substrates, Appl. Surf. Sci. 254, 2804 (2008).
  35. A. Le Donne, S. Binetti, G. Isella, B. Pichaud, M. Texier, M. Acciarri, and S. Pizzini: Advances in structural characterization of thin film nanocrystalline silicon for photovoltaic applications, Solid State Phenom. 131-133, 33 (2008).
  36. D. Cavalcoli, M. Rossi, A. Tomasi, A. Cavallini, D. Chrastina, and G. Isella: Hydrogenated nanocrystalline silicon thin films studied by scanning force microscopy, Solid State Phenom. 131-133, 547 (2008).
  37. A. Cavallini, D. Cavalcoli, M. Rossi, A. Tomasi, S. Pizzini, D. Chrastina, and G. Isella: Defect analysis of hydrogenated nanocrystalline Si thin films, Physica B 401-402, 519 (2007).
  38. A. Trita, I. Cristiani, V. Degiorgio, D. Chrastina, and H. von Känel: Measurement of carrier lifetime and interface recombination velocity in Si-Ge waveguides, Appl. Phys. Lett. 91, 041112 (2007).
  39. A. Trita, I. Cristiani, V. Degiorgio, M. Döbeli, D. Chrastina, and H. von Känel: Measurement of the lifetime of photo-generated free carriers in SiGe waveguides, J. Nonlinear Opt. Phys. 16, 207 (2007).
  40. S. L. Rumyantsev, K. Fobelets, T. Hackbarth, and M. S. Shur: Low frequency noise in insulated-gate strained-Si n-channel modulation doped field effect transistors, Jpn. J. Appl. Phys. 46, 4011 (2007).
  41. D. Colombo, E. Grilli, M. Guzzi, S. Sanguinetti, S. Marchionna, M. Bonfanti, A. Fedorov, H. von Känel, G. Isella, and E. Müller: Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates, J. Appl. Phys. 101, 103519 (2007).
  42. M. Grydlik, P. Rauter, T. Fromherz, C. Falub, D. Gruetzmacher, G. Isella, and G. Bauer: Resonator fabrication for switchable two-color MIR detectors based on p-type SiGe quantum cascade injectors, AIP Conf. Proc. 893, 1411 (2007).
  43. N. Zerounian, M. Enciso-Aguilar, T. Hackbarth, H.-J. Herzog, and F. Aniel: Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET, Solid State Electron. 51, 449 (2007).
  44. B. Rössner, H. von Känel, D. Chrastina, G. Isella, and B. Batlogg: Effective mass measurement: the influence of hole band nonparabolicity in SiGe/Ge quantum wells, Semicond. Sci. Technol. 22, S191 (2007).
  45. G. Isella, J. Osmond, M. Kummer, R. Kaufmann, and H. von Känel: Heterojunction photodiodes fabricated from Ge/Si (100) layers grown by low-energy plasma-enhanced CVD, Semicond. Sci. Technol. 22, S26 (2007).
  46. M. Grydlik, P. Rauter, T. Fromherz, G. Bauer, C. Falub, D. Gruetzmacher, and G. Isella: Resonator fabrication for cavity enhanced, tunable Si/Ge quantum cascade detectors, Physica E 32, 313 (2006).
  47. S. Tsujino, H. Sigg, G. Mussler, D. Chrastina, and H. von Känel: Photocurrent and transmission spectroscopy of direct-gap interband transitions in Ge/SiGe quantum wells, Appl. Phys. Lett. 89, 262119 (2006).
  48. F. Pezzoli, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, and G. Bauer: Strain-induced shift of phonon modes in Si1-xGex alloys, Mat. Sci. Semicond. Process. 9, 541 (2006).
  49. B. Rössner, B. Batlogg, H. von Känel, D. Chrastina, and G. Isella: Hole band nonparabolicity and effective mass measurement in p-SiGe/Ge heterostructures, Mat. Sci. Semicond. Process. 9, 777 (2006).
  50. A. Virtuani, S. Marchionna, M. Acciarri, G. Isella, and H. von Kaenel: Electron-beam-induced current imaging for the characterisation of structural defects in Si1-xGex films grown by LE-PECVD, Mat. Sci. Semicond. Process. 9, 798 (2006).
  51. S. Marchionna, A. Virtuani, M. Acciarri, G. Isella, and H. von Kaenel: Defect imaging of SiGe strain relaxed buffers grown by LEPECVD, Mat. Sci. Semicond. Process. 9, 802 (2006).
  52. D. Colombo, E. Grilli, M. Guzzi, S. Sanguinetti, A. Fedorov, H. von Känel, and G. Isella: Study of thermal strain relaxation in GaAs grown on Ge/Si substrates, J. Lumin. 121, 375 (2006).
  53. S. Pizzini, M. Acciarri, S. Binetti, D. Cavalcoli, A. Cavallini, D. Chrastina, L. Colombo, E. Grilli, G. Isella, M. Lancin, A. Le Donne, A. Mattoni, K. Peter, B. Pichaud, E. Poliani, M. Rossi, S. Sanguinetti, M. Texier, and H. von Känel: Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications, Mat. Sci. Eng. B 134, 118 (2006).
  54. R. Sordan, A. Miranda, J. Osmond, D. Chrastina, G. Isella, and H. von Känel: Logic gates with a single Hall bar heterostructure, Appl. Phys. Lett. 89, 152122 (2006).
  55. I. B. Berkutov, Y. F. Komnik, V. V. Andrievskii, O. A. Mironov, M. Myronov, and D. R. Leadley: Weak localization and charge-carrier interaction effects in a two-dimensional hole gas in a germanium quantum well in a SiGe/Ge/SiGe heterostructure, Low Temp. Phys. 32, 683 (2006).
  56. B. Rössner, H. von Känel, D. Chrastina, G. Isella, and B. Batlogg: 2-D hole gas with two-subband occupation in a strained Ge channel: Scattering mechanisms, Thin Solid Films 508, 351 (2006).
  57. R. Ginige, B. Corbett, M. Modreanu, C. Barrett, J. Hilgarth, G. Isella, D. Chrastina, and H. von Känel: Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells, Semicond. Sci. Technol. 21, 775 (2006).
  58. R. Ginige, B. Corbett, J. Hilgarth, D. Chrastina, and H. von Känel: Single junction GaAs solar cells on Ge virtual substrates grown directly on silicon by LEPECVD.In 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona (2005).
  59. M. Enciso-Aguilar, P. Crozat, T. Hackbarth, H.-J. Herzog, and F. Aniel: Microwave noise performance and modeling of SiGe-based HFETs, IEEE T. Electron Dev. 52, 2409 (2005).
  60. A. R. Khan, K. Mundboth, J. Stangl, G. Bauer, H. von Känel, A. Federov, G. Isella, and D. Colombo: X-ray investigation of thick epitaxial GaAs/InGaAs layers on Ge pseudosubstrates.In IEEE International Conference on Emerging Technologies (2005).
  61. B. Rössner, H. von Känel, D. Chrastina, G. Isella, and B. Batlogg: Electron-electron interaction in p-SiGe/Ge quantum wells, Mat. Sci. Eng. B 124-125, 184 (2005).
  62. F. Pezzoli, L. Martinelli, E. Grilli, M. Guzzi, S. Sanguinetti, M. Bollani, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, and G. Bauer: Raman spectroscopy of Si1-xGex epilayers, Mat. Sci. Eng. B 124-125, 127 (2005).
  63. I. Sagnes, Y. Chriqui, G. Saint-Girons, S. Bouchoule, D. Bensahel, O. Kermarrec, G. Isella, and H. von Kaenel: InGaAs/GaAs sources monolithically grown by MOVPE on Ge/Si substrates.In IEEE 2nd Int. Conf. Group IV Photonics, 207-209 (2005).
  64. D. Chrastina, B. Rössner, G. Isella, H. von Känel, J. P. Hague, T. Hackbarth, H.-J. Herzog, K.-H. Hieber, and U. König: LEPECVD - a production technique for SiGe MOSFETs and MODFETs.In E. Zschech, C. Whelan, and T. Mikolajick (eds.), Materials for Information Technology, 16-28. Springer (2005).
  65. G. Gabetta, C. Flores, R. Campesato, C. Casale, G. Timó, G. Smekens, J. Vanbegin, H. von Kanel, and G. Isella: SJ and TJ GaAs concentrator solar cells on Si virtual wafers.In Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 850-853 (2005).
  66. S. Binetti, M. Acciarri, M. Bollani, L. Fumagalli, H. von Känel, and S. Pizzini: Nanocrystalline silicon film grown by Low Energy Plasma Enhanced Chemical Vapor Deposition for optoelectronic applications, Thin Solid Films 487, 19 (2005).
  67. D. Chrastina, G. Isella, M. Bollani, B. Rössner, E. Müller, T. Hackbarth, E. Wintersberger, Z. Zhong, J. Stangl, and H. von Känel: Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition, J. Cryst. Growth 281, 281 (2005).
  68. M. Acciarri, S. Binetti, M. Bollani, A. Comotti, L. Fumagalli, S. Pizzini, and H. von Känel: Nanocrystalline silicon film grown by LEPECVD for photovoltaic applications, Sol. Energ. Mat. Sol. C. 87, 11 (2005).
  69. G. Nicholas, T. J. Grasby, E. H. C. Parker, T. E. Whall, D. J. Paul, A. G. R. Evans, and H. von Känel: Investigation of the injection velocity of holes in strained Si pMOSFETs, Semicond. Sci. Technol. 20, L20 (2005).
  70. M. Cantoni, M. Riva, G. Isella, R. Bertacco, and F. Ciccacci: Fe thin films grown on single-crystal and virtual Ge(001) substrates, J. Appl. Phys. 97, 093906 (2005).
  71. Y. Chriqui, G. Saint-Girons, G. Isella, H. von Kaenel, S. Bouchoule, and I. Sagnes: Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate, Opt. Mater. 27, 846 (2005).
  72. A. Marzegalli, F. Montalenti, and L. Miglio: Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers, Appl. Phys. Lett. 86, 041912 (2005).
  73. H. von Känel, D. Chrastina, B. Rössner, G. Isella, J. P. Hague, and M. Bollani: High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition, Microelectronic Engineering 76, 278 (2004).
  74. A. Marzegalli, F. Montalenti, M. Bollani, L. Miglio, G. Isella, D. Chrastina, and H. von Känel: Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain-dependent dislocation nature, Microelectronic Engineering 76, 289 (2004).
  75. D. Chrastina, G. Isella, B. Rössner, M. Bollani, E. Müller, T. Hackbarth, and H. von Känel: High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition, Thin Solid Films 459, 37 (2004).
  76. F. Sánchez-Almazán, E. Napolitani, A. Carnera, A. V. Drigo, M. Berti, J. Stangl, Z. Zhong, G. Bauer, G. Isella, and H. von Känel: Ge quantification of high Ge content relaxed buffer layers by RBS and SIMS, Nucl. Instrum. Methods Phys. Rev. B 226, 301 (2004).
  77. F. Sánchez-Almazán, E. Napolitani, A. Carnera, A. V. Drigo, G. Isella, H. von Känel, and M. Berti: Matrix effects in sims depth profiles of sige relaxed buffer layers, Appl. Surf. Sci. 231-232, 704 (2004).
  78. G. Isella, D. Chrastina, B. Rössner, T. Hackbarth, H.-J. Herzog, U. König, and H. von Känel: Low-energy plasma-enhanced chemical vapor deposition for strained si and ge heterostructures and devices, Solid State Electron. 48, 1317 (2004).
  79. M. Enciso Aguilar, M. Rodriguez, N. Zerounian, F. Aniel, T. Hackbarth, H.-J. Herzog, U. König, S. Mantl, B. Holländer, D. Chrastina, G. Isella, H. von Känel, K. Lyutovich, and M. Oehme: Strained Si HFETs for microwave applications: state-of-the-art and further approaches, Solid State Electron. 48, 1443 (2004).
  80. B. Rössner, D. Chrastina, G. Isella, and H. von Känel: Scattering mechanisms in high-mobility strained Ge channels, Appl. Phys. Lett. 84, 3058 (2004).
  81. L. Martinelli, A. Marzegalli, P. Raiteri, M. Bollani, F. Montalenti, L. Miglio, D. Chrastina, G. Isella, and H. von Känel: Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data, Appl. Phys. Lett. 84, 2895 (2004).
  82. M. Bollani, E. Müller, G. Isella, S. Signoretti, D. Chrastina, and H. von Känel: Dislocation density and structure in Si1-xGex buffer layers deposited by LEPECVD, Inst. Phys. Conf. Ser. 180, 247 (2004).
  83. D. Chrastina, J. P. Hague, and D. R. Leadley: Application of Bryan's algorithm to the mobility spectrum analysis of semiconductor devices, J. Appl. Phys. 94, 6583 (2003).
  84. T. Hackbarth, H.-J. Herzog, K.-H. Hieber, U. König, M. Bollani, D. Chrastina, and H. von Känel: Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition, Appl. Phys. Lett. 83, 5464 (2003).
  85. Y. Chriqui, G. Saint-Girons, S. Bouchoule, J.-M. Moisons, G. Isella, H. von Kaenel, and I. Sagnes: Room temperature laser operation of strained InGaAs/GaAs structure monolithically grown by MOCVD on LE-PECVD Ge/Si virtual substrate, Electron. Lett. 39, 1658 (2003).
  86. S. G. Thomas, S. Bharatan, R. E. Jones, R. Thoma, T. Zirkle, N. V. Edwards, R. Liu, X. D. Wang, Q. Xie, C. Rosenblad, J. Ramm, G. Isella, and H. von Känel: Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition, J. Electron. Mater. 32, 976 (2003).
  87. P. Abele, M. Zeuner, I. Kallfass, J. Müller, H. L. Hiwilepo, T. Hackbarth, D. Chrastina, H. von Känel, U. König, and H. Schumacher: 32 GHz MMIC distributed amplifier based on N-channel SiGe MODFETs, Electron. Lett. 39, 1448 (2003).
  88. M. Bollani, E. Müller, S. Signoretti, C. Beeli, G. Isella, M. Kummer, and H. von Känel: Compressively strained Ge channels on relaxed SiGe buffer layers, Mat. Sci. Eng. B 101, 102 (2003).
  89. B. Rößner, G. Isella, and H. von Känel: Effective mass in remotely doped Ge quantum wells, Appl. Phys. Lett. 82, 754 (2003).
  90. M. Enciso-Aguilar, F. Aniel, P. Crozat, R. Adde, H.-J. Herzog, T. Hackbarth, U. König, and H. von Känel: DC and high frequency performance of 0.1μm n-type Si/Si0.6Ge0.4 MODFET with fMAX=188GHz at 300 K and fMAX=230GHz at 50K.Electron. Lett. 39, 149 (2003).
  91. R. E. Jones, S. G. Thomas, S. Bharatan, R. Thoma, C. Jasper, T. Zirkle, N. V. Edwards, R. Liu, X. D. Wang, Q. Xie, C. Rosenblad, J. Ramm, G. Isella, H. von Känel, J. Oh, and J. C. C. Campbell: Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD.In Electron Devices Meeting (IEDM) 2002, International, 793-796 (2002).
  92. H. von Känel, M. Kummer, G. Isella, E. Müller, and T. Hackbarth: Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition, Appl. Phys. Lett. 80, 2922 (2002).
  93. M. Kummer, C. Rosenblad, A. Dommann, T. Hackbarth, G. Höck, M. Zeuner, E. Müller, and H. von Känel: Low energy plasma enhanced chemical vapor deposition, Mat. Sci. Eng. B 89, 288 (2002).
  94. C. Rosenblad, J. Stangl, E. Müller, G. Bauer, and H. von Känel: Strain relaxation of graded SiGe buffers grown at very high rates, Mat. Sci. Eng. B 71, 20 (2000).
  95. C. Rosenblad, H. von Känel, M. Kummer, A. Dommann, and E. Müller: A plasma process for ultrafast deposition of SiGe graded buffer layers, Appl. Phys. Lett. 76, 427 (2000).
  96. C. Rosenblad, M. Kummer, A. Dommann, E. Müller, M. Gusso, L. Tapfer, and H. von Känel: Virtual substrates for the n- and p-type Si-MODFET grown at very high rates, Mat. Sci. Eng. B 74, 113 (2000).
  97. H. von Känel, C. Rosenblad, M. Kummer, E. Müller, T. Graf, and T. Hackbarth: Fast deposition process for graded SiGe buffer layers, Jpn. J. Appl. Phys. 39, 2050 (2000).
  98. C. Rosenblad, H. R. Deller, and H. von Känel: Influence of hydrogen desorption on the generation of defects in LEPECVD, Mat. Sci. Eng. B 58, 76 (1999).
  99. C. Rosenblad, H. R. Deller, A. Dommann, T. Meyer, P. Schroeter, and H. von Känel: Silicon epitaxy by low-energy plasma enhanced chemical vapor deposition, J. Vac. Sci. Technol. A 16, 2785 (1998).
  100. C. Rosenblad, T. Graf, J. Stangl, Y. Zhuang, G. Bauer, J. Schulze, and H. von Känel: Epitaxial growth at high rates by LEPECVD, Thin Solid Films 336, 89 (1998).
  101. C. Rosenblad, H. R. Deller, T. Graf, E. Müller, and H. von Känel: Low temperature epitaxial growth by LEPECVD, J. Cryst. Growth 188, 125 (1998).
  102. C. Rosenblad, H. R. Deller, M. Döbeli, E. Müller, and H. von Känel: Low-temperature heteroepitaxy by LEPECVD, Thin Solid Films 318, 11 (1998).

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Last updated: 21st March 2010