L-NESS

Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Giovanni Isella

Leader of SiGe Epitaxy group

Contact

e-mail:
tel:Como: +39 031 332 7303
fax:Como: +39 031 332 7617
address:Politecnico di Milano
Polo di Como
Via Anzani 42
22100 Como
Italy
office:Via Anzani 1.06

Giovanni Isella

Education

Main Research Interest

Publications

  1. F. Pezzoli, F. Bottegoni, D. Trivedi, F. Ciccacci, A. Giorgioni, P. Li, S. Cecchi, E. Grilli, Y. Song, M. Guzzi, H. Dery, and G. Isella: Optical spin injection and spin lifetime in Ge heterostructures, Phys. Rev. Lett. 108, 156603 (2012).
  2. K. Kolata, S. Imhof, N. S. Köster, S. Cecchi, D. Chrastina, G. Isella, J. E. Sipe, A. Thränhardt, and S. Chatterjee: Hole system heating by ultrafast interband energy transfer in optically excited Ge/SiGe quantum wells, Phys. Rev. B 85, 165312 (2012).
  3. P. H. Wu, D. Dumcenco, Y. S. Huang, H. P. Hsu, C. H. Lai, T. Y. Lin, D. Chrastina, G. Isella, E. Gatti, and K. K. Tiong: Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantum-well structure, Appl. Phys. Lett. 100, 141905 (2012).
  4. F. Bottegoni, A. Ferrari, G. Isella, S. Cecchi, M. Marcon, D. Chrastina, G. Trezzi, and F. Ciccacci: Ge/SiGe heterostructures as emitters of polarized electrons, J. Appl. Phys. 111, 063916 (2012).
  5. D. Chrastina, G. M. Vanacore, M. Bollani, P. Boye, S. Schöder, M. Burghammer, R. Sordan, G. Isella, M. Zani, and A. Tagliaferri: Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction, Nanotechnology 23, 155702 (2012).
  6. C. V. Falub, H. von Känel, F. Isa, R. Bergamaschini, A. Marzegalli, D. Chrastina, G. Isella, E. Müller, P. Niedermann, and L. Miglio: Scaling hetero-epitaxy from layers to three-dimensional crystals, Science 335, 1330 (2012).
  7. S. Bietti, L. Cavigli, M. Abbarchi, A. Vinattieri, M. Gurioli, A. Fedorov, S. Cecchi, F. Isa, G. Isella, and S. Sanguinetti: High quality GaAs quantum nanostructures grown by droplet epitaxy on Ge and Ge-on-Si substrates, phys. stat. sol. (c) 9, 202 (2012).
  8. P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. L. Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien: 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator, Opt. Express 20, 3219 (2012).
  9. H. P. Hsu, P. H. Wu, Y. S. Huang, D. Chrastina, G. Isella, H. von Känel, and K. K. Tiong: Photoreflectance study of direct-gap interband transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers, Appl. Phys. Lett. 100, 041905 (2012).
  10. P. H. Wu, Y. S. Huang, H. P. Hsu, D. Chrastina, G. Isella, H. von Känel, and K. K. Tiong: Temperature dependence of the direct interband transitions of a Ge/SiGe multiple-quantum-well structure with Ge-rich barriers, Phys. Rev. B 85, 035303 (2012).
  11. A. Giorgioni, E. Gatti, E. Grilli, A. Chernikov, S. Chatterjee, D. Chrastina, G. Isella, and M. Guzzi: Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells, J. Appl. Phys. 111, 013501 (2012).
  12. E. Gatti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, A. Chernikov, V. Bornwasser, N. Köster, R. Woscholski, and S. Chatterjee: Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells, Phys. Rev. B 84, 245319 (2011).
  13. K. Kolata, N. Köster, R. Woscholski, C. Lange, S. Chatterjee, G. Isella, D. Chrastina, and H. von Känel: Giant AC Stark shift in germanium.In Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, QMH1 (2011).
  14. P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, N. Izard, X. L. Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien: Room temperature direct gap electroluminescence from Ge/Si0.15Ge0.85 multiple quantum well waveguide, Appl. Phys. Lett. 99, 141106 (2011).
  15. P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. L. Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien: 10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector, IEEE Photonic Tech. L. 23, 1430 (2011).
  16. R. Kaufmann, G. Isella, A. Sanchez-Amores, S. Neukom, A. Neels, L. Neumann, A. Brenzikofer, A. Dommann, C. Urban, and H. von Känel: Near infrared image sensor with integrated germanium photodiodes, J. Appl. Phys. 110, 023107 (2011).
  17. L. Carroll, F. Imbert, H. Sigg, M. Süess, E. Müller, M. Virgilio, G. Pizzi, P. Rossbach, D. Chrastina, and G. Isella: Quantum-confined direct-gap transitions in tensile-strained Ge/SiGe multiple quantum wells, Appl. Phys. Lett. 99, 031907 (2011).
  18. F. Bottegoni, G. Isella, S. Cecchi, and F. Ciccacci: Spin polarized photoemission from strained Ge epilayers, Appl. Phys. Lett. 98, 242107 (2011).
  19. P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. L. Roux, S. Edmond, J.-R. Coudevylle, E. Cassan, and L. Vivien: Polarization dependence of quantum-confined Stark effect in Ge/SiGe quantum well planar waveguides, Optics Lett. 36, 1794 (2011).
  20. N. S. Köster, K. Kolata, R. Woscholski, C. Lange, G. Isella, D. Chrastina, H. von Känel, and S. Chatterjee: Giant dynamical Stark shift in germanium quantum wells, Appl. Phys. Lett. 98, 161103 (2011).
  21. N. S. Köster, C. Lange, K. Kolata, S. Chatterjee, M. Schäfer, M. Kira, S. W. Koch, D. Chrastina, G. Isella, H. von Känel, and H. Sigg: Ultrafast transient gain in Ge/SiGe quantum wells, phys. stat. sol. (c) 8, 1109 (2011).
  22. P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien: Ge/SiGe multiple quantum well photodiode with 30 GHz bandwidth, Appl. Phys. Lett. 98, 131112 (2011).
  23. E. Gatti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, and H. von Känel: Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers, Appl. Phys. Lett. 98, 031106 (2011).
  24. R. Ferragut, A. Calloni, A. Dupasquier, and G. Isella: Defect characterization in SiGe/SOI epitaxial semiconductors by positron annihilation, Nanoscale Res. Lett. 5, 1942 (2010).
  25. N. S. Köster, C. Lange, S. Chatterjee, H. Sigg, D. Chrastina, G. Isella, H. von Känel, M. Schäfer, M. Kira, and S. W. Koch: Transient optical gain and carrier dynamics in Ge/SiGe quantum wells, Proc. SPIE Int. Soc. Opt. Eng. 7600, 76000B (2010).
  26. G. M. Vanacore, M. Zani, M. Bollani, D. Colombo, G. Isella, J. Osmond, R. Sordan, and A. Tagliaferri: Size evolution of ordered SiGe islands grown by surface thermal diffusion on pit-patterned Si(100) surface, Nanoscale Res. Lett. 5, 1921 (2010).
  27. S. Bietti, C. Somaschini, E. Sarti, N. Koguchi, S. Sanguinetti, G. Isella, D. Chrastina, and A. Fedorov: Photoluminescence study of low thermal budget III-V nanostructures on silicon by droplet epitaxy, Nanoscale Res. Lett. 5, 1650 (2010).
  28. S. Bietti, C. Somaschini, S. Sanguinetti, N. Koguchi, G. Isella, D. Chrastina, and A. Fedorov: Low thermal budget fabrication of III-V quantum nanostructures on Si substrates, J. Phys. Conf. Ser. 245, 012078 (2010).
  29. P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. Le Roux, E. Gatti, S. Edmond, J. Osmond, E. Cassan, and L. Vivien: Ge/SiGe quantum wells structures for optical modulation.In IEEE 7th Int. Conf. Group IV Photonics, 63-65 (2010).
  30. A. Picco, E. Bonera, E. Grilli, M. Guzzi, M. Giarola, G. Mariotto, D. Chrastina, and G. Isella: Raman efficiency in SiGe alloys, Phys. Rev. B 82, 115317 (2010).
  31. P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. L. Roux, E. Gatti, S. Edmond, J. Osmond, E. Cassan, and L. Vivien: Quantum-confined Stark effect measurements in Ge/SiGe quantum well structures, Optics Lett. 35, 2913 (2010).
  32. G. Micard, G. Hahn, B. Terheiden, D. Chrastina, G. Isella, T. Moiseev, D. Cavalcoli, A. Cavallini, S. Binetti, M. Acciarri, A. Le Donne, M. Texier, and B. Pichaud: Electrical and structural properties of p-type nanocrystalline silicon grown by LEPECVD for photovoltaic applications, phys. stat. sol. (c) 7, 712 (2010).
  33. G. Matmon, D. J. Paul, L. Lever, M. Califano, Z. Ikonić, R. W. Kelsall, J. Zhang, D. Chrastina, G. Isella, H. von Känel, E. Müller, and A. Neels: Si/SiGe quantum cascade superlattice designs for terahertz emission, J. Appl. Phys. 107, 053109 (2010).
  34. C. Lange, N. S. Köster, S. Chatterjee, H. Sigg, D. Chrastina, G. Isella, H. von Känel, B. Kunert, and W. Stolz: A comparison of ultrafast carrier thermalization in GaxIn1-xAs and Ge quantum wells, Phys. Rev. B 81, 045320 (2010).
  35. M. Bollani, D. Chrastina, A. Fedorov, G. Isella, and R. Sordan: Patterning of Si substrates for Ge/Si(001) islands grown by low-energy plasma enhanced CVD, Proc. SPIE Nanotechnology IV 7364, 7364 0I (2009).
  36. S. Bietti, C. Somaschini, S. Sanguinetti, N. Koguchi, G. Isella, and D. Chrastina: Fabrication of high efficiency III-V quantum nanostructures at low thermal budget on Si, Appl. Phys. Lett. 95, 241102 (2009).
  37. S. Bietti, S. Sanguinetti, C. Somaschini, N. Koguchi, G. Isella, D. Chrastina, and A. Fedorov: Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate, IOP Conf. Ser.: Mat. Sci. Eng. 6, 012009 (2009).
  38. T. Moiseev, G. Isella, D. Chrastina, and C. Cavallotti: Langmuir probe plasma parameters and kinetic rates in a Ar-SiH4-H2 plasma during nc-Si films deposition for photovoltaic applications, J. Phys. D: Appl. Phys. 42, 225202 (2009).
  39. C. Cavallotti, M. Rondanini, T. Moiseev, D. Chrastina, and G. Isella: An investigation of the gas phase and surface chemistry active during the PECVD of nc-silicon: A detailed model of the gas phase and surface chemistry, ECS Transactions 25, 107 (2009).
  40. T. Moiseev, D. Chrastina, G. Isella, and C. Cavallotti: Plasma composition and kinetic reaction rates in a LEPECVD Ar-SiH4-H2 plasma during nc-Si films deposition for photovoltaic applications, ECS Transactions 25, 1065 (2009).
  41. F. Pezzoli, E. Bonera, M. Bollani, S. Sanguinetti, E. Grilli, M. Guzzi, G. Isella, D. Chrastina, and H. von Känel: Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers, Acta Phys. Pol. A 116, 78 (2009).
  42. A. Trita, F. Bragheri, I. Cristiani, V. Degiorgio, D. Chrastina, D. Colombo, G. Isella, H. von Känel, F. Gramm, E. Müller, M. Döbeli, E. Bonera, R. Gatti, F. Pezzoli, E. Grilli, M. Guzzi, and L. Miglio: Impact of misfit dislocations on wavefront distortion in Si/SiGe/Si optical waveguides, Opt. Commun. 282, 4716 (2009).
  43. A. Calloni, R. Ferragut, F. Moia, A. Dupasquier, G. Isella, D. Marongiu, G. Norga, A. Federov, and D. Chrastina: Positron annihilation studies of defects in Si1-xGex/SOI heterostructures, phys. stat. sol. (c) 6, 2304 (2009).
  44. R. Sordan, A. Miranda, F. Traversi, D. Colombo, D. Chrastina, G. Isella, M. Masserini, L. Miglio, K. Kern, and K. Balasubramanian: Vertical arrays of nanofluidic channels fabricated without nanolithography, Lab Chip 9, 1556 (2009).
  45. E. Poliani, C. Somaschini, S. Sanguinetti, E. Grilli, M. Guzzi, A. Le Donne, S. Binetti, D. Chrastina, and G. Isella: Tuning by means of laser annealing of electronic and structural properties of nc-Si/a-Si:H, Mat. Sci. Eng. B 159-160, 31 (2009).
  46. J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri, and H. von Känel: Ultra low dark current Ge/Si(100) photodiodes with low thermal budget, Appl. Phys. Lett. 94, 201106 (2009).
  47. C. Lange, N. S. Köster, S. Chatterjee, H. Sigg, D. Chrastina, G. Isella, H. von Känel, M. Schäfer, M. Kira, and S. W. Koch: Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion, Phys. Rev. B 79, 201306(R) (2009).
  48. M. Bonfanti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, H. von Känel, and H. Sigg: Direct-gap related optical transitions in Ge/SiGe quantum wells with Ge-rich barriers, Physica E 41, 972 (2009).
  49. T. Moiseev, D. Chrastina, G. Isella, and C. Cavallotti: Threshold ionization mass spectrometry in the presence of excited silane radicals, J. Phys. D: Appl. Phys. 42, 072003 (2009).
  50. M. Virgilio, M. Bonfanti, D. Chrastina, A. Neels, G. Isella, E. Grilli, M. Guzzi, G. Grosso, H. Sigg, and H. von Känel: Polarization-dependent absorption in Ge/SiGe multiple quantum wells: theory and experiment, Phys. Rev. B 79, 075323 (2009).
  51. P. L. Novikov, A. Le Donne, S. Cereda, L. Miglio, S. Pizzini, S. Binetti, M. Rondanini, C. Cavallotti, D. Chrastina, T. Moiseev, H. von Känel, G. Isella, and F. Montalenti: Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments, Appl. Phys. Lett. 94, 051904 (2009).
  52. F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, and G. Bauer: Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures, Mat. Sci. Semicond. Process. 11, 279 (2008).
  53. D. Chrastina, A. Neels, M. Bonfanti, M. Virgilio, G. Isella, E. Grilli, M. Guzzi, G. Grosso, H. Sigg, and H. von Känel: Ge/SiGe multiple quantum wells for optical applications.In IEEE 5th Int. Conf. Group IV Photonics, 194-196 (2008).
  54. J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, and H. von Känel: High speed Ge photodetector integrated on silicon-on-insulator operating at very low bias voltage.In IEEE 5th Int. Conf. Group IV Photonics, 164-166 (2008).
  55. G. Isella, G. Matmon, A. Neels, E. Müller, M. Califano, D. Chrastina, H. von Känel, L. Lever, Z. Ikonić, R. W. Kelsall, and D. J. Paul: SiGe/Si quantum cascade structures deposited by low-energy plasma-enhanced CVD.In IEEE 5th Int. Conf. Group IV Photonics, 29-31 (2008).
  56. J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, and H. von Känel: Ge/Si (100) heterojunction photodiodes fabricated from material grown by low-energy plasma-enhanced chemical vapour deposition, Thin Solid Films 517, 380 (2008).
  57. D. J. Paul, G. Matmon, L. Lever, Z. Ikonić, R. W. Kelsall, D. Chrastina, G. Isella, H. von Känel, E. Müller, and A. Neels: SiGe/Si bound-to-continuum terahertz quantum cascade emitters.In SiGe, Ge, and Related Compounds, 865-874 (2008).
  58. M. Bonfanti, E. Grilli, M. Guzzi, M. Virgilio, G. Grosso, D. Chrastina, G. Isella, H. von Känel, and A. Neels: Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers, Phys. Rev. B 78, 041407(R) (2008).
  59. R. Sordan, A. Miranda, J. Osmond, D. Colombo, D. Chrastina, G. Isella, and H. von Känel: Gate-controlled rectifying barrier in a two-dimensional hole gas, Nanotechnology 19, 335201 (2008).
  60. M. Rondanini, C. Cavallotti, D. Ricci, D. Chrastina, G. Isella, T. Moiseev, and H. von Känel: An experimental and theoretical investigation of a magnetically confined dc plasma discharge, J. Appl. Phys. 104, 013304 (2008).
  61. D. J. Paul, G. Matmon, L. Lever, Z. Ikonić, R. W. Kelsall, D. Chrastina, G. Isella, and H. von Känel: Si/SiGe bound-to-continuum quantum cascade terahertz emitters, Proc. SPIE Int. Soc. Opt. Eng. 6996, 69961C (2008).
  62. F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, and G. Bauer: Phonon strain shift coefficients in Si1-xGex alloys, J. Appl. Phys. 103, 093521 (2008).
  63. M. Stoffel, A. Malachias, T. Merdzhanova, F. Cavallo, G. Isella, D. Chrastina, H. von Känel, A. Rastelli, and O. G. Schmidt: SiGe wet chemical etchants with high compositional selectivity and low strain sensitivity, Semicond. Sci. Technol. 23, 085021 (2008).
  64. A. Le Donne, S. Binetti, G. Isella, and S. Pizzini: Structural homogeneity of nc-Si films grown by Low-Energy PECVD, Electrochem. Solid St. 11, P5 (2008).
  65. A. Le Donne, S. Binetti, G. Isella, B. Pichaud, M. Texier, M. Acciarri, and S. Pizzini: Structural characterization of nc-Si films grown by low-energy PECVD on different substrates, Appl. Surf. Sci. 254, 2804 (2008).
  66. A. Le Donne, S. Binetti, G. Isella, B. Pichaud, M. Texier, M. Acciarri, and S. Pizzini: Advances in structural characterization of thin film nanocrystalline silicon for photovoltaic applications, Solid State Phenom. 131-133, 33 (2008).
  67. D. Cavalcoli, M. Rossi, A. Tomasi, A. Cavallini, D. Chrastina, and G. Isella: Hydrogenated nanocrystalline silicon thin films studied by scanning force microscopy, Solid State Phenom. 131-133, 547 (2008).
  68. A. Cavallini, D. Cavalcoli, M. Rossi, A. Tomasi, S. Pizzini, D. Chrastina, and G. Isella: Defect analysis of hydrogenated nanocrystalline Si thin films, Physica B 401-402, 519 (2007).
  69. D. Colombo, E. Grilli, M. Guzzi, S. Sanguinetti, S. Marchionna, M. Bonfanti, A. Fedorov, H. von Känel, G. Isella, and E. Müller: Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates, J. Appl. Phys. 101, 103519 (2007).
  70. M. Grydlik, P. Rauter, T. Fromherz, C. Falub, D. Gruetzmacher, G. Isella, and G. Bauer: Resonator fabrication for switchable two-color MIR detectors based on p-type SiGe quantum cascade injectors, AIP Conf. Proc. 893, 1411 (2007).
  71. B. Rössner, H. von Känel, D. Chrastina, G. Isella, and B. Batlogg: Effective mass measurement: the influence of hole band nonparabolicity in SiGe/Ge quantum wells, Semicond. Sci. Technol. 22, S191 (2007).
  72. G. Isella, J. Osmond, M. Kummer, R. Kaufmann, and H. von Känel: Heterojunction photodiodes fabricated from Ge/Si (100) layers grown by low-energy plasma-enhanced CVD, Semicond. Sci. Technol. 22, S26 (2007).
  73. M. Grydlik, P. Rauter, T. Fromherz, G. Bauer, C. Falub, D. Gruetzmacher, and G. Isella: Resonator fabrication for cavity enhanced, tunable Si/Ge quantum cascade detectors, Physica E 32, 313 (2006).
  74. F. Pezzoli, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, and G. Bauer: Strain-induced shift of phonon modes in Si1-xGex alloys, Mat. Sci. Semicond. Process. 9, 541 (2006).
  75. B. Rössner, B. Batlogg, H. von Känel, D. Chrastina, and G. Isella: Hole band nonparabolicity and effective mass measurement in p-SiGe/Ge heterostructures, Mat. Sci. Semicond. Process. 9, 777 (2006).
  76. A. Virtuani, S. Marchionna, M. Acciarri, G. Isella, and H. von Kaenel: Electron-beam-induced current imaging for the characterisation of structural defects in Si1-xGex films grown by LE-PECVD, Mat. Sci. Semicond. Process. 9, 798 (2006).
  77. G. Katsaros, A. Rastelli, M. Stoffel, G. Isella, H. von Känel, A. M. Bittner, J. Tersoff, U. Denker, O. G. Schmidt, G. Costantini, and K. Kern: Investigating the lateral motion of SiGe islands by selective chemical etching, Surf. Sci. 600, 2608 (2006).
  78. S. Marchionna, A. Virtuani, M. Acciarri, G. Isella, and H. von Kaenel: Defect imaging of SiGe strain relaxed buffers grown by LEPECVD, Mat. Sci. Semicond. Process. 9, 802 (2006).
  79. D. Colombo, E. Grilli, M. Guzzi, S. Sanguinetti, A. Fedorov, H. von Känel, and G. Isella: Study of thermal strain relaxation in GaAs grown on Ge/Si substrates, J. Lumin. 121, 375 (2006).
  80. S. Pizzini, M. Acciarri, S. Binetti, D. Cavalcoli, A. Cavallini, D. Chrastina, L. Colombo, E. Grilli, G. Isella, M. Lancin, A. Le Donne, A. Mattoni, K. Peter, B. Pichaud, E. Poliani, M. Rossi, S. Sanguinetti, M. Texier, and H. von Känel: Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications, Mat. Sci. Eng. B 134, 118 (2006).
  81. R. Sordan, A. Miranda, J. Osmond, D. Chrastina, G. Isella, and H. von Känel: Logic gates with a single Hall bar heterostructure, Appl. Phys. Lett. 89, 152122 (2006).
  82. B. Rössner, H. von Känel, D. Chrastina, G. Isella, and B. Batlogg: 2-D hole gas with two-subband occupation in a strained Ge channel: Scattering mechanisms, Thin Solid Films 508, 351 (2006).
  83. R. Ginige, B. Corbett, M. Modreanu, C. Barrett, J. Hilgarth, G. Isella, D. Chrastina, and H. von Känel: Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells, Semicond. Sci. Technol. 21, 775 (2006).
  84. A. R. Khan, K. Mundboth, J. Stangl, G. Bauer, H. von Känel, A. Federov, G. Isella, and D. Colombo: X-ray investigation of thick epitaxial GaAs/InGaAs layers on Ge pseudosubstrates.In IEEE International Conference on Emerging Technologies (2005).
  85. B. Rössner, H. von Känel, D. Chrastina, G. Isella, and B. Batlogg: Electron-electron interaction in p-SiGe/Ge quantum wells, Mat. Sci. Eng. B 124-125, 184 (2005).
  86. F. Pezzoli, L. Martinelli, E. Grilli, M. Guzzi, S. Sanguinetti, M. Bollani, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, and G. Bauer: Raman spectroscopy of Si1-xGex epilayers, Mat. Sci. Eng. B 124-125, 127 (2005).
  87. I. Sagnes, Y. Chriqui, G. Saint-Girons, S. Bouchoule, D. Bensahel, O. Kermarrec, G. Isella, and H. von Kaenel: InGaAs/GaAs sources monolithically grown by MOVPE on Ge/Si substrates.In IEEE 2nd Int. Conf. Group IV Photonics, 207-209 (2005).
  88. D. Chrastina, B. Rössner, G. Isella, H. von Känel, J. P. Hague, T. Hackbarth, H.-J. Herzog, K.-H. Hieber, and U. König: LEPECVD - a production technique for SiGe MOSFETs and MODFETs.In E. Zschech, C. Whelan, and T. Mikolajick (eds.), Materials for Information Technology, 16-28. Springer (2005).
  89. G. Gabetta, C. Flores, R. Campesato, C. Casale, G. Timó, G. Smekens, J. Vanbegin, H. von Kanel, and G. Isella: SJ and TJ GaAs concentrator solar cells on Si virtual wafers.In Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 850-853 (2005).
  90. D. Chrastina, G. Isella, M. Bollani, B. Rössner, E. Müller, T. Hackbarth, E. Wintersberger, Z. Zhong, J. Stangl, and H. von Känel: Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition, J. Cryst. Growth 281, 281 (2005).
  91. M. Cantoni, M. Riva, G. Isella, R. Bertacco, and F. Ciccacci: Fe thin films grown on single-crystal and virtual Ge(001) substrates, J. Appl. Phys. 97, 093906 (2005).
  92. Y. Chriqui, G. Saint-Girons, G. Isella, H. von Kaenel, S. Bouchoule, and I. Sagnes: Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate, Opt. Mater. 27, 846 (2005).
  93. H. von Känel, D. Chrastina, B. Rössner, G. Isella, J. P. Hague, and M. Bollani: High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition, Microelectron. Eng. 76, 278 (2004).
  94. A. Marzegalli, F. Montalenti, M. Bollani, L. Miglio, G. Isella, D. Chrastina, and H. von Känel: Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain-dependent dislocation nature, Microelectron. Eng. 76, 289 (2004).
  95. D. Chrastina, G. Isella, B. Rössner, M. Bollani, E. Müller, T. Hackbarth, and H. von Känel: High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition, Thin Solid Films 459, 37 (2004).
  96. F. Sánchez-Almazán, E. Napolitani, A. Carnera, A. V. Drigo, M. Berti, J. Stangl, Z. Zhong, G. Bauer, G. Isella, and H. von Känel: Ge quantification of high Ge content relaxed buffer layers by RBS and SIMS, Nucl. Instrum. Methods Phys. Rev. B 226, 301 (2004).
  97. F. Sánchez-Almazán, E. Napolitani, A. Carnera, A. V. Drigo, G. Isella, H. von Känel, and M. Berti: Matrix effects in sims depth profiles of sige relaxed buffer layers, Appl. Surf. Sci. 231-232, 704 (2004).
  98. G. Isella, D. Chrastina, B. Rössner, T. Hackbarth, H.-J. Herzog, U. König, and H. von Känel: Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices, Solid State Electron. 48, 1317 (2004).
  99. M. Enciso Aguilar, M. Rodriguez, N. Zerounian, F. Aniel, T. Hackbarth, H.-J. Herzog, U. König, S. Mantl, B. Holländer, D. Chrastina, G. Isella, H. von Känel, K. Lyutovich, and M. Oehme: Strained Si HFETs for microwave applications: state-of-the-art and further approaches, Solid State Electron. 48, 1443 (2004).
  100. B. Rössner, D. Chrastina, G. Isella, and H. von Känel: Scattering mechanisms in high-mobility strained Ge channels, Appl. Phys. Lett. 84, 3058 (2004).
  101. L. Martinelli, A. Marzegalli, P. Raiteri, M. Bollani, F. Montalenti, L. Miglio, D. Chrastina, G. Isella, and H. von Känel: Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data, Appl. Phys. Lett. 84, 2895 (2004).
  102. M. Bollani, E. Müller, G. Isella, S. Signoretti, D. Chrastina, and H. von Känel: Dislocation density and structure in Si1-xGex buffer layers deposited by LEPECVD, Inst. Phys. Conf. Ser. 180, 247 (2004).
  103. Y. Chriqui, G. Saint-Girons, S. Bouchoule, J.-M. Moisons, G. Isella, H. von Kaenel, and I. Sagnes: Room temperature laser operation of strained InGaAs/GaAs structure monolithically grown by MOCVD on LE-PECVD Ge/Si virtual substrate, Electron. Lett. 39, 1658 (2003).
  104. S. G. Thomas, S. Bharatan, R. E. Jones, R. Thoma, T. Zirkle, N. V. Edwards, R. Liu, X. D. Wang, Q. Xie, C. Rosenblad, J. Ramm, G. Isella, and H. von Känel: Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition, J. Electron. Mater. 32, 976 (2003).
  105. P. Abele, M. Zeuner, I. Kallfass, J. Müller, H. L. Hiwilepo, T. Hackbarth, D. Chrastina, H. von Känel, U. König, and H. Schumacher: 32 GHz MMIC distributed amplifier based on N-channel SiGe MODFETs, Electron. Lett. 39, 1448 (2003).
  106. M. Bollani, E. Müller, S. Signoretti, C. Beeli, G. Isella, M. Kummer, and H. von Känel: Compressively strained Ge channels on relaxed SiGe buffer layers, Mat. Sci. Eng. B 101, 102 (2003).
  107. B. Rößner, G. Isella, and H. von Känel: Effective mass in remotely doped Ge quantum wells, Appl. Phys. Lett. 82, 754 (2003).
  108. R. E. Jones, S. G. Thomas, S. Bharatan, R. Thoma, C. Jasper, T. Zirkle, N. V. Edwards, R. Liu, X. D. Wang, Q. Xie, C. Rosenblad, J. Ramm, G. Isella, H. von Känel, J. Oh, and J. C. C. Campbell: Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD.In Electron Devices Meeting (IEDM) 2002, International, 793-796 (2002).
  109. H. von Känel, M. Kummer, G. Isella, E. Müller, and T. Hackbarth: Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition, Appl. Phys. Lett. 80, 2922 (2002).
  110. G. Isella, M. Marcon, R. Bertacco, G. Trezzi, N. Incorvaia, F. Ciccacci, and L. Duò: Versatile apparatus for investigating ultrathin magnetic films, J. Electron Spectrosc. 122, 221 (2002).
  111. F. Ciccacci, G. Isella, L. Duò, M. Marcon, and R. Bertacco: Spin polarized empty states spectroscopy of thin films and multilayers, Trends in Vacuum Science & Technology 5, 75 (2002).
  112. M. Portalupi, L. Duò, G. Isella, R. Bertacco, M. Marcon, and F. Ciccacci: Electronic structure of epitaxial thin NiO(100) films grown on Ag(100): Towards a firm experimental basis, Phys. Rev. B 64, 165402 (2001).
  113. G. Isella, R. Bertacco, M. Zani, L. Duò, and F. Ciccacci: Evolution of the magnetic and electronic properties of ultrathin Cr(001) films, Solid State Commun. 116, 283 (2000).
  114. G. Isella, R. Bertacco, L. Duò, and F. Ciccacci: Magnetic coupling in Fe/Cr/Fe(001) by spin-resolved empty-state spectroscopies, Surf. Sci. 454-456, 909 (2000).
  115. R. Bertacco, G. Isella, L. Duò, F. Ciccacci, A. di Bona, P. Luches, and S. Valeri: Structural and electronic properties of thin Co films on Fe(001) and Fe(001)-p(1×1)O in the bct-to-hcp transition regime, Surf. Sci. 454-456, 671 (2000).
  116. R. Bertacco, L. Duò, G. Isella, and F. Ciccacci: Structural and magnetic properties of the Ce/Fe(001) interface: a spin resolved inverse photoemission study, Surf. Sci. 440, 301 (1999).
  117. F. Ciccacci, S. De Rossi, G. Isella, and A. Magnoni: Vanadium films on Fe(100) studied by spin-resolved inverse photoemission, Solid State Commun. 101, 893 (1997).

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