Reactive Ion Etching
Fig. 1. Our Reactive Ion Etching system.
Our system is a parallel plate reactive ion etching reactor (without ICP or ECR). It uses 13.56 MHz radio frequency signal to generate a plasma of chemically reactive gas used to etch silicon, germanium and graphene.
The RIE has three mass flow controllers to assure precise control of the process gases (SF6, CF4, and O2).
Fig. 2. Mass Flow controllers.
The chamber pressure is controlled by a throttle valve. Typical process pressure varies from 7 to 30 mtorr.
The cathode electrode is water cooled down to 16°C.
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Last updated: 14th May 2013