The L-NESS features many world-class growth, processing, and characterization facilities.
Low-energy plasma-enhanced chemical vapour deposition is used to grow high-quality SiGe heterostructures.
An atomic-force microscope is used to characterize surface morphology and to image devices.
A high-resolution x-ray diffractometer is used to structurally characterize thin films and semiconductor heterostructures.
A closed-cycle He cryostat is used for magnetotransport measurements.
The magneto-optical Kerr effect is used to probe magnetic properties.
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Last updated: 14th May 2013