L-NESS

Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Posters presented at MNE 2014

SiGe stressors for tensile strain in Ge membranes by top-down e-beam lithography

Valeria Mondiali, Monica Bollani, Daniel Chrastina, Jacopo Frigerio and Daniele Scopece and Francesco Montalenti and Emiliano Bonera

Publications

  1. R. A. Minamisawa, M. J. Süess, R. Spolenak, J. Faist, C. David, J. Gobrecht, K. K. Bourdelle, and H. Sigg: Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%, Nature Communications 3, 1096 (2012).
  2. M. J. Süess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg: Analysis of enhanced light emission from highly strained germanium micro bridges, Nature Photonics 7, 466 (2013).
  3. M. Bollani, D. Chrastina, M. Fiocco, V. Mondiali, J. Frigerio, L. Gagliano, and E. Bonera: Lithographically-defined low dimensional SiGe nanostripes as silicon stressors, J. Appl. Phys. 112, 094318 (2012).
  4. E. Bonera, M. Bollani, D. Chrastina, F. Pezzoli, A. Picco, O. G. Schmidt, and D. Terziotti: Substrate strain manipulation by nanostructure perimeter forces, J. Appl. Phys. 113, 164308 (2013).
  5. D. Scopece, F. Montalenti, M. Bollani, D. Chrastina, and E. Bonera: Strained Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis, Semicond. Sci. Technol. 29, 095012 (2014).
  6. V. A. Shah, M. Myronov, C. Wongwanitwatana, L. Bawden, M. J. Prest, J. S. Richardson-Bullock, S. Rhead, E. H. C. Parker, T. E. Whall, and D. R. Leadley: Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures, Sci. Technol. Adv. Mat. 13, 055002 (2012).

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Last updated: 17th March 2017