L-NESS

Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Jacopo Frigerio

Post-doc

Contact

e-mail:
tel:Como: +39 031 332 7303
fax:Como: +39 031 332 7617
address:Politecnico di Milano
Polo di Como
Via Anzani 42
22100 Como
Italy
office:Via Anzani 1.05

Jacopo Frigerio

Main Research Interest

Publications

  1. V. Giliberti, E. Sakat, M. Bollani, M. V. Altoe, M. Melli, A. Weber-Bargioni, L. Baldassarre, M. Celebrano, J. Frigerio, G. Isella, S. Cabrini, and M. Ortolani: Scanning probe microscopy: Functionalization of scanning probe tips with epitaxial semiconductor layers, Small Methods 141, 168 (2015).
  2. J. M. Ramírez, V. Vakarin, P. Chaisakul, J. Frigerio, A. Ballabio, C. Gilles, D. Chrastina, Q. Liu, G. Maisons, X. Le Roux, L. Vivien, M. Carras, G. Isella, and D. Marris-Morini: Ge-rich SiGe waveguides for mid-infrared photonics, Proc. SPIE Int. Soc. Opt. Eng. 10108, 1010812 (2017).
  3. J. M. Ramírez, V. Vakarin, J. Frigerio, P. Chaisakul, D. Chrastina, X. Le Roux, A. Ballabio, L. Vivien, G. Isella, and D. Marris-Morini: Ge-rich graded-index Si1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics, Opt. Express 25, 6561 (2016).
  4. J. M. Ramírez, V. Vakarin, M. Rahman, P. Chaisakul, X. Le Roux, L. Vivien, D. Marris-Morini, D. Chrastina, J. Frigerio, A. Ballabio, and G. Isella: Broadband single mode SiGe graded waveguides with tight mode confinement for mid-infrared photonics.In IEEE Photonics North, 1 (2016).
  5. S.-Q. Li, J. Frigerio, D. Chrastina, G. Isella, A. Solanki, W. Song, C. Zheng, and K. B. Crozier: Vertical germanium nanowire photodetectors with suspended graphene top contact.In Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, SM4E.7 (2016).
  6. M. Bollani, V. Giliberti, E. Sakat, L. Baldassarre, M. Celebrano, J. Frigerio, G. Isella, M. Finazzi, M. Melli, A. Weber-Bargioni, S. Cabrini, P. Biagioni, and M. Ortolani: Photoluminescence emission from a nanofabricated scanning probe tip made of epitaxial germanium, Microelectron. Eng. 159, 164 (2016).
  7. V. Vakarin, P. Chaisakul, J. Frigerio, A. Ballabio, X. Le Roux, J. R. Coudevylle, L. Vivien, G. Isella, and D. Marris-Morini: Silicon germanium on graded buffer as a new platform for optical interconnects on silicon.In H. Schröder and R. T. Chen (eds.), Optical Interconnects XVI, volume Proc. SPIE 9753, 975309 (2016).
  8. R. W. Millar, K. Gallacher, A. Samarelli, J. Frigerio, D. Chrastina, T. Dieing, G. Isella, and D. J. Paul: Expanding the Ge emission wavelength to 2.25 μm with SixNy strain engineering, Thin Solid Films 602, 90 (2016).
  9. J. Frigerio, V. Vakarin, P. Chaisakul, A. Ballabio, D. Chrastina, X. Le Roux, L. Vivien, G. Isella, and D. Marris-Morini: Electro-absorption and electro-refraction in Ge/SiGe coupled quantum wells.In L. Vivien, L. Pavesi, and S. Pelli (eds.), Silicon Photonics and Photonic Integrated Circuits V, volume Proc. SPIE 9891, 989113 (2016).
  10. D. Marris-Morini, V. Vakarin, P. Chaisakul, J. Frigerio, M. Rahman, J. M. Ramìrez, M.-S. Rouifed, D. Chrastina, X. Le Roux, G. Isella, and L. Vivien: Silicon photonics based on Ge/SiGe quantum well structures.In Transparent Optical Networks (ICTON), 2016 18th International Conference on, 1--3 (2016).
  11. R. W. Millar, K. Gallacher, J. Frigerio, A. Ballabio, A. Bashir, I. MacLaren, G. Isella, and D. J. Paul: Analysis of Ge micro-cavities with in-plane tensile strains above 2%, Opt. Express 24, 4365 (2016).
  12. J. Frigerio, L. Baldassarre, E. Sakat, A. Samarelli, K. Gallacher, M. Fischer, D. Brida, D. J. Paul, G. Isella, P. Biagioni, and M. Ortolani: Heavily phosphorous-doped germanium thin films for mid-infrared plasmonics.In IEEE 12th Int. Conf. Group IV Photonics, 94--95 (2015).
  13. D. Marris-Morini, P. Chaisakul, J. Frigerio, M.-S. Rouifed, V. Vakarin, D. Chrastina, X. Le Roux, G. Isella, and L. Vivien: Silicon photonics based on Ge/SiGe quantum well structures.In IEEE 12th Int. Conf. Group IV Photonics, 11--12 (2015).
  14. K. Gallacher, A. Ballabio, R. W. Millar, A. Samarelli, J. Frigerio, D. Chrastina, G. Isella, L. Baldassarre, M. Ortolani, E. Sakat, P. Biagioni, and D. J. Paul: Mid-infrared intersubband absorption in p-Ge/SiGe quantum wells grown on Si.In IEEE 12th Int. Conf. Group IV Photonics, 15--16 (2015).
  15. R. W. Millar, K. Gallacher, J. Frigerio, D. Chrastina, G. Isella, and D. J. Paul: Highly strained Ge and Si microdisks with silicon nitride stressors.In IEEE 12th Int. Conf. Group IV Photonics, 15--16 (2015).
  16. D. Marris-Morini, P. Chaisakul, J. Frigerio, D. Chrastina, V. Vakarin, S. Cecchi, G. Isella, and L. Vivien: Optical interconnects based on Ge/SiGe multiple quantum well structures.In Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, SM3G.1 (2015).
  17. V. Vakarin, P. Chaisakul, J. Frigerio, A. Ballabio, X. Le Roux, J.-R. Coudevylle, D. Bouville, D. Perez-Galacho, L. Vivien, G. Isella, and D. Marris-Morini: Sharp bends and Mach--Zehnder interferometer based on Ge-rich-SiGe waveguides on SiGe graded buffer, Opt. Express 23, 30821 (2015).
  18. A. Samarelli, J. Frigerio, E. Sakat, L. Baldassarre, K. Gallacher, M. Finazzi, G. Isella, M. Ortolani, P. Biagioni, and D. J. Paul: Fabrication of mid-infrared plasmonic antennas based on heavily doped germanium thin films, Thin Solid Films 602, 52 (2015).
  19. J. Frigerio, V. Vakarin, P. Chaisakul, M. Ferretto, D. Chrastina, X. Le Roux, L. Vivien, G. Isella, and D. Marris-Morini: Giant electro-optic effect in Ge/SiGe coupled quantum wells, Sci. Reports 5, 15398 (2015).
  20. L. Baldassarre, E. Sakat, J. Frigerio, A. Samarelli, K. Gallacher, E. Calandrini, G. Isella, D. Paul, M. Ortolani, and P. Biagioni: Mid-infrared plasmon-enhanced spectroscopy with germanium antennas on silicon substrates, Nano Lett. 15, 7225 (2015).
  21. M. Bollani, D. Chrastina, L. Gagliano, L. Rossetto, D. Scopece, M. Barget, V. Mondiali, J. Frigerio, M. Lodari, F. Pezzoli, F. Montalenti, and E. Bonera: Local uniaxial tensile strain in germanium up to 4% by epitaxial nanostructures, Appl. Phys. Lett. 107, 083101 (2015).
  22. R. W. Millar, K. Gallacher, A. Samarelli, J. Frigerio, D. Chrastina, G. Isella, T. Dieing, and D. J. Paul: Extending the emission wavelength of Ge nanopillars to 2.25 μm using silicon nitride stressors, Opt. Express 23, 18193 (2015).
  23. V. Giliberti, E. Sakat, L. Baldassarre, A. Di Gaspare, A. Notargiacomo, E. Giovine, J. Frigerio, G. Isella, M. Melli, A. Weber-Bargioni, S. Aloni, S. Sassolini, S. Cabrini, P. Biagioni, M. Ortolani, and M. Bollani: Three-dimensional fabrication of free-standing epitaxial semiconductor nanostructures obtained by focused ion beam, Microelectron. Eng. 141, 168 (2015).
  24. R. W. Millar, K. Gallacher, A. Samarelli, D. C. S. Dumas, J. Frigerio, D. Chrastina, G. Isella, and D. J. Paul: Process induced tensile strain of Ge on Si nanopillars by ICP-PECVD SiN stressor layers.In IEEE 11th Int. Conf. Group IV Photonics, 235--236 (2014).
  25. R. Geiger, M. J. Süess, C. Bonzon, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg: Carrier lifetimes in uniaxially strained Ge micro bridges.In IEEE 11th Int. Conf. Group IV Photonics, 227--228 (2014).
  26. P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M. S. Rouifed, S. Cecchi, G. Isella, and L. Vivien: High quality SiGe waveguide platform for Ge photonics on bulk silicon substrates.In IEEE 11th Int. Conf. Group IV Photonics, 108--109 (2014).
  27. M. S. Rouifed, D. Marris-Morini, X. Le Roux, P. Chaisakul, J. Frigerio, D. Chrastina, G. Isella, and L. Vivien: Advances towards the demonstration of a Ge/SiGe modulator integrated on SOI.In IEEE 11th Int. Conf. Group IV Photonics, 75--76 (2014).
  28. J. Frigerio, F. Isa, E. Ghisetti, G. Isella, and L. Miglio: Infrared photodetectors fabricated on 3D epitaxial Ge-on-Si.In IEEE 11th Int. Conf. Group IV Photonics, 61--62 (2014).
  29. J. Frigerio, M. Ortolani, L. Baldassarre, E. Calandrini, A. Samarelli, K. Gallacher, E. Sakat, M. Finazzi, D. J. Paul, P. Biagioni, and G. Isella: Mid-infrared plasmonic germanium antennas on silicon.In IEEE 11th Int. Conf. Group IV Photonics, 27--28 (2014).
  30. J. Frigerio, P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, S. Cecchi, D. Chrastina, G. Isella, and L. Vivien: (Invited) Photonic interconnection made by a Ge/SiGe MQW modulator connected to a Ge/SiGe MQW photodetector through a SiGe waveguide, ECS Transactions 64, 761 (2014).
  31. A. Samarelli, L. Ferre Llin, S. Cecchi, J. Frigerio, T. Etzelstorfer, E. Müller Gubler, J. Stangl, D. Chrastina, G. Isella, and D. Paul: (Invited) The thermoelectric properties of Ge/SiGe based superlattices: from materials to energy harvesting modules, ECS Transactions 64, 929 (2014).
  32. P. Biagioni, J. Frigerio, A. Samarelli, K. Gallacher, L. Baldassare, E. Sakat, E. Calandrini, R. W. Millar, V. Giliberti, G. Isella, D. J. Paul, and M. Ortolani: Group-IV midinfrared plasmonics, J. Nanophoton. 9, 093789 (2015).
  33. M. Celebrano, M. Baselli, M. Bollani, J. Frigerio, A. B. Shehata, A. Della Frera, A. Tosi, A. Farina, F. Pezzoli, J. Osmond, X. Wu, B. Hecht, R. Sordan, D. Chrastina, G. Isella, L. Duò, M. Finazzi, and P. Biagioni: Emission engineering in germanium nanostructures, ACS Photonics 2, 53 (2014).
  34. P. Chaisakul, J. Frigerio, D. Marris-Morini, V. Vakarin, D. Chrastina, G. Isella, and L. Vivien: O-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning, J. Appl. Phys. 116, 193103 (2014).
  35. J. Frigerio, M. Lodari, D. Chrastina, V. Mondiali, G. Isella, and M. Bollani: Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates, J. Appl. Phys. 116, 113507 (2014).
  36. P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M.-S. Rouifed, S. Cecchi, P. Crozat, G. Isella, and L. Vivien: Integrated germanium optical interconnects on silicon substrates, Nature Photonics 8, 482 (2014).
  37. S. Cecchi, E. Gatti, D. Chrastina, J. Frigerio, E. Müller Gubler, D. J. Paul, M. Guzzi, and G. Isella: Thin SiGe virtual substrates for Ge heterostructure integration on silicon, J. Appl. Phys. 115, 093502 (2014).
  38. M.-S. Rouifed, D. Marris-Morini, P. Chaisakul, J. Frigerio, G. Isella, D. Chrastina, S. Edmond, X. Le Roux, J.-R. Coudevylle, D. Bouville, and L. Vivien: Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3 μm, IEEE J. Sel. Top. Quant. 20, 3400207 (2014).
  39. R. Geiger, J. Frigerio, M. J. Süess, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg: Excess carrier lifetimes in Ge layers on Si, Appl. Phys. Lett. 104, 062106 (2014).
  40. D. Marris-Morini, P. Chaisakul, M.-S. Rouifed, J. Frigerio, D. Chrastina, G. Isella, S. Edmond, X. Le Roux, J.-R. Coudevylle, and L. Vivien: Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells, Nanophotonics 2, 279 (2013).
  41. M. J. Süess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg: Analysis of enhanced light emission from highly strained germanium micro bridges, Nature Photonics 7, 466 (2013).
  42. J. Frigerio, P. Chaisakul, D. Marris-Morini, S. Cecchi, M.-S. Rouifed, G. Isella, and L. Vivien: Refractive index change induced by quantum confined Stark effect in Ge quantum wells.In IEEE 10th Int. Conf. Group IV Photonics, 67--68 (2013).
  43. J. Frigerio, P. Chaisakul, D. Marris-Morini, S. Cecchi, M. S. Roufied, G. Isella, and L. Vivien: Electro-refractive effect in Ge/SiGe multiple quantum wells, Appl. Phys. Lett. 102, 061102 (2013).
  44. P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, J. Frigerio, D. Chrastina, J.-R. Coudevylle, X. Le Roux, S. Edmond, G. Isella, and L. Vivien: Recent progress in GeSi electro-absorption modulators, Sci. Technol. Adv. Mat. 15, 014601 (2014).
  45. R. Geiger, J. Frigerio, M. J. Süess, R. A. Minamisawa, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg: Excess carrier lifetimes in Ge layers on Si.In IEEE 10th Int. Conf. Group IV Photonics, 103--104 (2013).
  46. R. Geiger, M. J. Süess, R. A. Minamisawa, C. Bonzon, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg: Enhanced light emission from Ge micro bridges uniaxially strained beyond 3%.In IEEE 10th Int. Conf. Group IV Photonics, 93--94 (2013).
  47. P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, J. Frigerio, G. Isella, D. Chrastina, and L. Vivien: Strong quantum-confined Stark effect from light hole excitonic transition in Ge quantum wells for ultra-compact optical modulator.In IEEE 10th Int. Conf. Group IV Photonics, 63--64 (2013).
  48. P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, J. Frigerio, G. Isella, D. Chrastina, J.-R. Coudevylle, X. Le Roux, S. Edmond, D. Bouville, and L. Vivien: Strong quantum-confined Stark effect from light hole related direct-gap transitions in Ge quantum wells, Appl. Phys. Lett. 102, 191107 (2013).
  49. P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, J. Frigerio, and L. Vivien: Ge quantum well optoelectronic devices for light modulation, detection, and emission, Solid State Electron. 83, 92 (2013).
  50. D. Chrastina, S. Cecchi, J. P. Hague, J. Frigerio, A. Samarelli, L. Ferre-Llin, D. J. Paul, E. Müller, T. Etzelstorfer, J. Stangl, and G. Isella: Ge/SiGe superlattices for nanostructured thermoelectric modules, Thin Solid Films 543, 153 (2013).
  51. A. Samarelli, L. Ferre Llin, S. Cecchi, J. Frigerio, T. Etzelstorfer, E. Müller, Y. Zhang, J. R. Watling, D. Chrastina, G. Isella, J. Stangl, J. P. Hague, J. M. R. Weaver, P. Dobson, and D. J. Paul: The thermoelectric properties of Ge/SiGe modulation doped superlattices, J. Appl. Phys. 113, 233704 (2013).
  52. G. Isella, P. Chaisakul, D. Marris-Morini, M. S. Rouifed, D. Chrastina, J. Frigerio, X. L. Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien: High extinction ratio, low energy Ge quantum well electro-absorption modulator with 23 GHz bandwidth, ECS Transactions 50, 387 (2013).
  53. K. Gallacher, P. Velha, D. J. Paul, S. Cecchi, J. Frigerio, D. Chrastina, and G. Isella: 1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates, Appl. Phys. Lett. 101, 211101 (2012).
  54. M. Bollani, D. Chrastina, M. Fiocco, V. Mondiali, J. Frigerio, L. Gagliano, and E. Bonera: Lithographically-defined low dimensional SiGe nanostripes as silicon stressors, J. Appl. Phys. 112, 094318 (2012).
  55. M.-S. Rouifed, P. Chaisakul, D. Marris-Morini, J. Frigerio, G. Isella, D. Chrastina, S. Edmond, X. Le Roux, J.-R. Coudevylle, and L. Vivien: Quantum-confined Stark effect at 1.3 μm in Ge/Si0.35Ge0.65 quantum-well structure, Optics Lett. 37, 3960 (2012).
  56. P. Chaisakul, M.-S. Rouifed, D. Marris-Morini, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien: High speed electro-absorption modulator based on quantum-confined Stark effect from Ge/SiGe multiple quantum wells.In IEEE 9th Int. Conf. Group IV Photonics, 60--62 (2012).
  57. P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien: Ge/SiGe multiple quantum well optoelectronic devices for silicon photonics.In SiGe Technology and Device Meeting, 2012. ISTDM 2012. (2012).
  58. P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien: 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator, Opt. Express 20, 3219 (2012).

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Last updated: 17th March 2017