L-NESS

Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Roman Sordan

Leader of Nanoscale Device Group

Contact

e-mail:
tel:+39 031 332 7622
fax:+39 031 332 7617
address:Politecnico di Milano
Polo di Como
Via Anzani 42
22100 Como
Italy
office:Via Anzani 1.02

Education

Main Research Interest

Publications (Journals)

  1. L. G. Rizzi, M. Bianchi, A. Behnam, E. Carrion, E. Guerriero, L. Polloni, E. Pop, and R. Sordan: Cascading wafer-scale integrated graphene complementary inverters under ambient conditions, Nano Lett. 12, 3948 (2012).
  2. M. Aouassa, I. Berbezier, L. Favre, A. Ronda, M. Bollani, R. Sordan, A. Delobbe, and P. Sudraud: Design of free patterns of nanocrystals with ad hoc features via templated dewetting, Appl. Phys. Lett. 101, 013117 (2012).
  3. D. Chrastina, G. M. Vanacore, M. Bollani, P. Boye, S. Schöder, M. Burghammer, R. Sordan, G. Isella, M. Zani, and A. Tagliaferri: Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction, Nanotechnology 23, 155702 (2012).
  4. E. Guerriero, L. Polloni, L. G. Rizzi, M. Bianchi, G. Mondello, and R. Sordan: Graphene audio voltage amplifier, Small 8, 357 (2012).
  5. M. Bollani, D. Chrastina, V. Montuori, D. Terziotti, E. Bonera, G. M. Vanacore, A. Tagliaferri, R. Sordan, C. Spinella, and G. Nicotra: Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy, Nanotechnology 23, 045302 (2012).
  6. A. Sagar, K. Balasubramanian, M. Burghard, K. Kern, and R. Sordan: Polymer-electrolyte gated graphene transistors for analog and digital phase detection, Appl. Phys. Lett. 99, 043307 (2011).
  7. E. U. Stützel, M. Burghard, K. Kern, F. Traversi, F. Nichele, and R. Sordan: A graphene nanoribbon memory cell, Small 6, 2822 (2010).
  8. M. Bollani, D. Chrastina, A. Fedorov, R. Sordan, A. Picco, and E. Bonera: Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition, Nanotechnology 21, 475302 (2010).
  9. M. Bollani, E. Bonera, D. Chrastina, A. Fedorov, V. Montuori, A. Picco, A. Tagliaferri, G. Vanacore, and R. Sordan: Ordered arrays of SiGe islands from low-energy PECVD, Nanoscale Res. Lett. 5, 1917 (2010).
  10. G. M. Vanacore, M. Zani, M. Bollani, D. Colombo, G. Isella, J. Osmond, R. Sordan and, A. Tagliaferri: Size evolution of ordered SiGe islands grown by surface thermal diffusion on pit-patterned Si(100) surface, Nanoscale Res. Lett. 5, 1921 (2010).
  11. F. Traversi, F. J. Guzman-Vazquez, L. G. Rizzi, V. Russo, C. S. Casari, C. Gómez-Navarro, and R. Sordan: Elastic properties of graphene suspended on a polymer substrate by e-beam exposure, New J. Phys. 12, 023034 (2010).
  12. V. Kapaklis, S. Grammatikopoulos, R. Sordan, A. Miranda, F. Traversi, H. von Känel, D. Trachylis, P. Poulopoulos, and C. Politis: Nanolithographic templates using diblock copolymer films on chemically heterogeneous substrates, J. Nanosci. Nanotechnol. 10, 6056 (2010).
  13. F. Traversi, V. Russo, and R. Sordan: Integrated complementary graphene inverter, Appl. Phys. Lett. 94, 223312 (2009).
  14. R. Sordan, A. Miranda, F. Traversi, D. Colombo, D. Chrastina, G. Isella, M. Masserini, L. Miglio, K. Kern, and K. Balasubramanian: Vertical arrays of nanofluidic channels fabricated without nanolithography, Lab Chip 9, 1556 (2009).
  15. R. Sordan, F. Traversi, and V. Russo: Logic gates with a single graphene transistor, Appl. Phys. Lett. 94, 073305 (2009).
  16. R. Sordan, A. Miranda, J. Osmond, D. Colombo, D. Chrastina, G. Isella, and H. von Känel: Gate-controlled rectifying barrier in a two-dimensional hole gas, Nanotechnology 19, 335201 (2008).
  17. R. Sordan, A. Miranda, J. Osmond, D. Chrastina, G. Isella, and H. von Känel: Logic gates with a single Hall bar heterostructure, Appl. Phys. Lett. 89, 152122 (2006).
  18. R. Sordan, K. Balasubramanian, M. Burghard, and K. Kern: Exclusive-OR gate with a single carbon nanotube, Appl. Phys. Lett. 88, 053119 (2006).
  19. R. Sordan, K. Balasubramanian, M. Burghard, and K. Kern: Coulomb blockade phenomena in electromigration break junctions, Appl. Phys. Lett. 87, 013106 (2005).
  20. K. Balasubramanian, R. Sordan, M. Burghard, and K. Kern: A selective electrochemical approach to carbon nanotube field-effect transistors, Nano Lett. 4, 827 (2004).
  21. S. Ahlert, L. Diekhöner, R. Sordan, K. Kern, and M. Jansen: Surface step structure of Ag13OsO6, experimental evidence for Ag13 cluster building blocks, Chem. Commun. 4, 462 (2004).
  22. J. B. Cui, R. Sordan, M. Burghard, and K. Kern: Carbon nanotube memory devices of high charge storage stability, Appl. Phys. Lett. 81, 3260 (2002).
  23. R. Sordan, M. Burghard, and K. Kern: Removable template route to metallic nanowires and nanogaps, Appl. Phys. Lett. 79, 2073 (2001).
  24. K. Nikolic, P. Nikolic, and R. Sordan: Conductance of quantum interference transistors in parallel and in series, Superlattices Microst. 26, 47 (1999).
  25. K. Nikolic and R. Sordan: Electronic transport in quantum waveguide systems with attached stubs, Phys. Rev. B 58, 9631 (1998).
  26. K. Nikolic and R. Sordan: Mesoscopic diode, Microelectron. Eng. 43-4, 527 (1998).
  27. K. Nikolic and R. Sordan: Magnetotransport in the quantum interference resonator, Solid State Phenom. 61-2, 239 (1998).
  28. R. Sordan and K. Nikolic: Quantum-constriction rectifier, Phys. Rev. B 54, 10332 (1996).
  29. R. Sordan and K. Nikolic: The nonlinear transport regime of a T-shaped quantum interference transistor , Appl. Phys. Lett. 68, 3599 (1996).
  30. R. Sordan and K. Nikolic: Quantum interference resonator: Effects of disorder, Phys.Rev. B 52, 9007 (1995).

Teaching

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Last updated: 14th May 2013