L-NESS

Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

LASSE (Layered Artificial Structures for Spin Electronics)

The LASSE (Layered Artificial Structures for Spin Electronics) laboratory is focused on the growth and characterization of films and heterostructures for spin electronics made by oxides (ferro- or ferri-magnetic, half metals, antiferromagnetic), 3d metals and semiconductors.

The available in vacuo synthesis techniques are pulsed-laser deposition (PLD) and molecular-beam epitaxy (MBE). Analysis and characterization of surfaces and interfaces are performed in situ by means of electron spectroscopy techniques, also with spin resolution: low and high energy electron diffraction (LEED, RHEED), Auger spectroscopy, x-ray and ultraviolet photoemission (XPS, UPS), photoelectron diffraction (XPD), spin-polarised inverse photoemission (SPIPE). Complementary experiments are carried out at synchrotron radiation facilities (ELETTRA-Trieste) after an ultra-high vacuum transfer of the samples. The growth of samples is supported by several ex-situ characterization tools such as: x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic and magnetic force microscopy (AFM, MFM), and magneto-optical Kerr effect (MOKE, also available in situ in the growth machine).

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Last updated: 09th October 2017