L-NESS

Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Poster presented at FisMat 2015

X-ray nanodiffraction in lithographically-defined semiconductor structures

Daniel Chrastina, Dominik Kriegner, Stefano Cecchi, Mario Lodari, Valeria Mondiali, Jacopo Frigerio, Michael Barget, Emiliano Bonera, Monica Bollani

Publications

  1. M. Bollani, D. Chrastina, L. Gagliano, L. Rossetto, D. Scopece, M. Barget, V. Mondiali, J. Frigerio, M. Lodari, F. Pezzoli, F. Montalenti, and E. Bonera: Local uniaxial tensile strain in germanium up to 4% by epitaxial nanostructures, Appl. Phys. Lett. 107, 083101 (2015).
  2. V. Mondiali, M. Lodari, D. Chrastina, M. Barget, E. Bonera, and M. Bollani: Micro and nanofabrication of SiGe/Ge bridges and membranes by wet-anisotropic etching, Microelectron. Eng. 141, 256 (2015).
  3. M. Bollani, D. Chrastina, M. Fiocco, V. Mondiali, J. Frigerio, L. Gagliano, and E. Bonera: Lithographically-defined low dimensional SiGe nanostripes as silicon stressors, J. Appl. Phys. 112, 094318 (2012).
  4. D. Chrastina, G. M. Vanacore, M. Bollani, P. Boye, S. Schöder, M. Burghammer, R. Sordan, G. Isella, M. Zani, and A. Tagliaferri: Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction, Nanotechnology 23, 155702 (2012).

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Last updated: 26th October 2017