Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

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Affiliated Institutions

• Polo di Como
• Politecnico di Milano
• Università Milano Bicocca

Monica Bollani

Researcher

Contact e-mail: tel: Como: +39 031 332 7356 fax: Como: +39 031 332 7617 address: Politecnico di Milano Polo di Como Via Anzani 42 22100 Como Italy office: Via Anzani 1.06

Education

• PhD from Marseille, France, 2000
• Degree in Physical Chemistry, Milan, Italy, 1997

Main Research Interest

• Electron-beam lithography for SiGe deposition

Publications

1. D. Chrastina, G. M. Vanacore, M. Bollani, P. Boye, S. Schöder, M. Burghammer, R. Sordan, G. Isella, M. Zani, and A. Tagliaferri: Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction, Nanotechnology 23, 155702 (2012).
2. M. Bollani, D. Chrastina, V. Montuori, D. Terziotti, E. Bonera, G. M. Vanacore, A. Tagliaferri, R. Sordan, C. Spinella, and G. Nicotra: Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy, Nanotechnology 23, 045302 (2012).
3. M. Bollani, D. Chrastina, A. Fedorov, R. Sordan, A. Picco, and E. Bonera: Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition, Nanotechnology 21, 475302 (2010).
4. G. M. Vanacore, M. Zani, M. Bollani, D. Colombo, G. Isella, J. Osmond, R. Sordan, and A. Tagliaferri: Size evolution of ordered SiGe islands grown by surface thermal diffusion on pit-patterned Si(100) surface, Nanoscale Res. Lett. 5, 1921 (2010).
5. G. M. Vanacore, M. Zani, G. Isella, J. Osmond, M. Bollani, and A. Tagliaferri: Quantitative investigation of the influence of carbon surfactant on Ge surface diffusion and island nucleation on Si(100), Phys. Rev. B 82, 125456 (2010).
6. M. Bollani, E. Bonera, D. Chrastina, A. Fedorov, V. Montuori, A. Picco, A. Tagliaferri, G. Vanacore, and R. Sordan: Ordered arrays of SiGe islands from low-energy PECVD, Nanoscale Res. Lett. 5, 1917 (2010).
7. M. Bollani, D. Chrastina, A. Fedorov, G. Isella, and R. Sordan: Patterning of Si substrates for Ge/Si(001) islands grown by low-energy plasma enhanced CVD, Proc. SPIE Nanotechnology IV 7364, 7364 0I (2009).
8. S. Binetti, M. Acciarri, M. Bollani, L. Fumagalli, H. von Känel, and S. Pizzini: Nanocrystalline silicon film grown by Low Energy Plasma Enhanced Chemical Vapor Deposition for optoelectronic applications, Thin Solid Films 487, 19 (2005).
9. D. Chrastina, G. Isella, M. Bollani, B. Rössner, E. Müller, T. Hackbarth, E. Wintersberger, Z. Zhong, J. Stangl, and H. von Känel: Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition, J. Cryst. Growth 281, 281 (2005).
10. M. Acciarri, S. Binetti, M. Bollani, A. Comotti, L. Fumagalli, S. Pizzini, and H. von Känel: Nanocrystalline silicon film grown by LEPECVD for photovoltaic applications, Sol. Energ. Mat. Sol. C. 87, 11 (2005).
11. H. von Känel, D. Chrastina, B. Rössner, G. Isella, J. P. Hague, and M. Bollani: High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition, Microelectron. Eng. 76, 278 (2004).
12. A. Marzegalli, F. Montalenti, M. Bollani, L. Miglio, G. Isella, D. Chrastina, and H. von Känel: Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain-dependent dislocation nature, Microelectron. Eng. 76, 289 (2004).
13. D. Chrastina, G. Isella, B. Rössner, M. Bollani, E. Müller, T. Hackbarth, and H. von Känel: High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition, Thin Solid Films 459, 37 (2004).
14. L. Martinelli, A. Marzegalli, P. Raiteri, M. Bollani, F. Montalenti, L. Miglio, D. Chrastina, G. Isella, and H. von Känel: Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data, Appl. Phys. Lett. 84, 2895 (2004).
15. M. Bollani, E. Müller, G. Isella, S. Signoretti, D. Chrastina, and H. von Känel: Dislocation density and structure in Si_1-xGe_x buffer layers deposited by LEPECVD, Inst. Phys. Conf. Ser. 180, 247 (2004).
16. T. Hackbarth, H.-J. Herzog, K.-H. Hieber, U. König, M. Bollani, D. Chrastina, and H. von Känel: Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition, Appl. Phys. Lett. 83, 5464 (2003).
17. M. Bollani, E. Müller, S. Signoretti, C. Beeli, G. Isella, M. Kummer, and H. von Känel: Compressively strained Ge channels on relaxed SiGe buffer layers, Mat. Sci. Eng. B 101, 102 (2003).
18. M. Bollani, R. Piagge, and D. Narducci: Modulation of Si(100) electronic surface density due to supramolecular interactions of gaseous molecules with self-assembled organic monolayers, Mat. Sci. Eng. C 15, 253 (2001).
19. M. Bollani, R. Piagge, A. Charaï, and D. Narducci: Experimental evidence and computational analysis of the electronic density modulation induced by gaseous molecules at Si(001) surfaces upon self-assembling organic monolayer, Appl. Surf. Sci. 175-176, 379 (2001).
20. M. Bollani, M. Portail, J.-M. Layet, A. Charaï, and D. Narducci: Final evidence for H termination of HF-treated Si surfaces: a comparative study by high-energy and vibrational spectroscopies, Mat. Sci. Eng. B 73, 240 (2000).
21. M. Bollani, L. Fares, A. Charaï, and D. Narducci: Chemically induced disordering of Si (100) surfaces upon SC1/SC2 etching analysed by high-resolution transmission electron microscopy, Mat. Sci. Eng. B 73, 154 (2000).