Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Monica Bollani



tel:Como: +39 031 332 7356
fax:Como: +39 031 332 7617
address:Politecnico di Milano
Polo di Como
Via Anzani 42
22100 Como
office:Via Anzani 1.06

Monica Bollani


Main Research Interest


  1. M. Bollani, V. Giliberti, E. Sakat, L. Baldassarre, M. Celebrano, J. Frigerio, G. Isella, M. Finazzi, M. Melli, A. Weber-Bargioni, S. Cabrini, P. Biagioni, and M. Ortolani: Photoluminescence emission from a nanofabricated scanning probe tip made of epitaxial germanium, Microelectron. Eng. 159, 164 (2016).
  2. S. Aghion, A. Ariga, T. Ariga, M. Bollani, E. Dei Cas, A. Ereditato, C. Evans, R. Ferragut, M. Giammarchi, C. Pistillo, M. Romé, S. Sala, and P. Scampoli: Detection of low energy antimatter with emulsions, J. Instrumentation 11, P06017 (2016).
  3. M. R. Barget, M. Lodari, V. Mondiali, D. Chrastina, M. Bollani, and E. Bonera: Tensile strain in Ge membranes induced by SiGe nanostressors, Appl. Phys. Lett. 109, 133109 (2016).
  4. M. Bollani, D. Chrastina, R. Ruggeri, G. Nicotra, L. Gagliano, E. Bonera, V. Mondiali, A. Marzegalli, F. Montalenti, C. Spinella, and L. Miglio: Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning, Nanotechnology 27, 425301 (2016).
  5. V. Mondiali, M. Lodari, M. Borriello, D. Chrastina, and M. Bollani: Top-down SiGe nanostructures on Ge membranes realized by e-beam lithography and wet etching, Microelectron. Eng. 153, 88 (2016).
  6. M. Chaigneau, G. M. Vanacore, M. Bollani, G. Picardi, A. Tagliaferri, and R. Ossikovski: Chapter 13. 20 nm--resolved stress profile in SiGe nano-stripes obtained by tip-enhanced Raman spectroscopy.In M. Lamy de la Chapelle, P. G. Gucciardi, and N. Lidgi-Guigui (eds.), Handbook of Enhanced Spectroscopy, 415--441. Pan Stanford 2015 (2015).
  7. M. Bollani, D. Chrastina, L. Gagliano, L. Rossetto, D. Scopece, M. Barget, V. Mondiali, J. Frigerio, M. Lodari, F. Pezzoli, F. Montalenti, and E. Bonera: Local uniaxial tensile strain in germanium up to 4% by epitaxial nanostructures, Appl. Phys. Lett. 107, 083101 (2015).
  8. M. K. Bhuyan, O. Jedrkiewicz, V. Sabonis, M. Mikutis, S. Recchia, A. Aprea, M. Bollani, and P. Di Trapani: High-speed laser-assisted cutting of strong transparent materials using picosecond Bessel beams, Appl. Phys. A 120, 443 (2015).
  9. V. Mondiali, M. Lodari, D. Chrastina, M. Barget, E. Bonera, and M. Bollani: Micro and nanofabrication of SiGe/Ge bridges and membranes by wet-anisotropic etching, Microelectron. Eng. 141, 256 (2015).
  10. V. Giliberti, E. Sakat, L. Baldassarre, A. Di Gaspare, A. Notargiacomo, E. Giovine, J. Frigerio, G. Isella, M. Melli, A. Weber-Bargioni, S. Aloni, S. Sassolini, S. Cabrini, P. Biagioni, M. Ortolani, and M. Bollani: Three-dimensional fabrication of free-standing epitaxial semiconductor nanostructures obtained by focused ion beam, Microelectron. Eng. 141, 168 (2015).
  11. V. Mondiali, M. Bollani, D. Chrastina, R. Rubert, G. Chahine, M. I. Richard, S. Cecchi, L. Gagliano, E. Bonera, T. Schülli, and L. Miglio: Strain release management in SiGe/Si films by substrate patterning, Appl. Phys. Lett. 105, 242103 (2014).
  12. M. Celebrano, M. Baselli, M. Bollani, J. Frigerio, A. B. Shehata, A. Della Frera, A. Tosi, A. Farina, F. Pezzoli, J. Osmond, X. Wu, B. Hecht, R. Sordan, D. Chrastina, G. Isella, L. Duò, M. Finazzi, and P. Biagioni: Emission engineering in germanium nanostructures, ACS Photonics 2, 53 (2014).
  13. E. M. Sala, M. Bollani, S. Bietti, A. Fedorov, L. Esposito, and S. Sanguinetti: Ordered array of Ga droplets on GaAs(001) by local anodic oxidation, J. Vac. Sci. Technol. B 32, 061206 (2014).
  14. J. Frigerio, M. Lodari, D. Chrastina, V. Mondiali, G. Isella, and M. Bollani: Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates, J. Appl. Phys. 116, 113507 (2014).
  15. D. Scopece, F. Montalenti, M. Bollani, D. Chrastina, and E. Bonera: Strained Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis, Semicond. Sci. Technol. 29, 095012 (2014).
  16. F. Bottegoni, M. Celebrano, M. Bollani, P. Biagioni, G. Isella, F. Ciccacci, and M. Finazzi: Spin voltage generation through optical excitation of complementary spin populations, Nature Mater. 13, 790 (2014).
  17. M. Bollani, S. Bietti, C. Frigeri, D. Chrastina, K. Reyes, P. Smereka, J. M. Millunchick, G. M. Vanacore, M. Burghammer, A. Tagliaferri, and S. Sanguinetti: Ordered arrays of embedded Ga nanoparticles on patterned silicon substrates, Nanotechnology 25, 205301 (2014).
  18. G. M. Vanacore, M. Zani, M. Bollani, E. Bonera, G. Nicotra, J. Osmond, G. Capellini, G. Isella, and A. Tagliaferri: Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source, Nanotechnology 25, 135606 (2014).
  19. V. Mondiali, M. Bollani, S. Cecchi, M.-I. Richard, T. Schülli, G. Chahine, and D. Chrastina: Dislocation engineering in SiGe on periodic and aperiodic Si(001) templates studied by fast scanning X-ray nanodiffraction, Appl. Phys. Lett. 104, 021918 (2014).
  20. S. Bietti, A. Scaccabarozzi, C. Frigeri, M. Bollani, E. Bonera, C. V. Falub, H. von Känel, L. Miglio, and S. Sanguinetti: Monolithic integration of optical grade GaAs on Si(001) substrates deeply patterned at a micron scale, Appl. Phys. Lett. 103, 262106 (2013).
  21. G. M. Vanacore, M. Chaigneau, N. Barrett, M. Bollani, F. Boioli, M. Salvalaglio, F. Montalenti, N. Manini, L. Caramella, P. Biagioni, D. Chrastina, G. Isella, O. Renault, M. Zani, R. Sordan, G. Onida, R. Ossikovski, H.-J. Drouhin, and A. Tagliaferri: Hydrostatic strain enhancement in laterally confined SiGe nanostripes, Phys. Rev. B 88, 115309 (2013).
  22. F. Li, P. Biagioni, M. Bollani, A. Maccagnan, and L. Piergiovanni: Multi-functional coating of cellulose nanocrystals for flexible packaging applications, Cellulose 20, 2491 (2013).
  23. M. Bollani, J. Osmond, G. Nicotra, C. Spinella, and D. Narducci: Strain-induced generation of silicon nanopillars, Nanotechnology 24, 335302 (2013).
  24. E. Bonera, M. Bollani, D. Chrastina, F. Pezzoli, A. Picco, O. G. Schmidt, and D. Terziotti: Substrate strain manipulation by nanostructure perimeter forces, J. Appl. Phys. 113, 164308 (2013).
  25. I. Berbezier, M. Aouassa, A. Ronda, L. Favre, M. Bollani, R. Sordan, A. Delobbe, and P. Sudraud: Ordered arrays of Si and Ge nanocrystals via dewetting of pre-patterned thin films, J. Appl. Phys. 113, 064908 (2013).
  26. M. Bollani, D. Chrastina, M. Fiocco, V. Mondiali, J. Frigerio, L. Gagliano, and E. Bonera: Lithographically-defined low dimensional SiGe nanostripes as silicon stressors, J. Appl. Phys. 112, 094318 (2012).
  27. M. Aouassa, I. Berbezier, L. Favre, A. Ronda, M. Bollani, R. Sordan, A. Delobbe, and P. Sudraud: Design of free patterns of nanocrystals with ad hoc features via templated dewetting, Appl. Phys. Lett. 101, 013117 (2012).
  28. D. Chrastina, G. M. Vanacore, M. Bollani, P. Boye, S. Schöder, M. Burghammer, R. Sordan, G. Isella, M. Zani, and A. Tagliaferri: Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction, Nanotechnology 23, 155702 (2012).
  29. M. Bollani, D. Chrastina, V. Montuori, D. Terziotti, E. Bonera, G. M. Vanacore, A. Tagliaferri, R. Sordan, C. Spinella, and G. Nicotra: Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy, Nanotechnology 23, 045302 (2012).
  30. M. Bollani, D. Chrastina, A. Fedorov, R. Sordan, A. Picco, and E. Bonera: Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition, Nanotechnology 21, 475302 (2010).
  31. G. M. Vanacore, M. Zani, M. Bollani, D. Colombo, G. Isella, J. Osmond, R. Sordan, and A. Tagliaferri: Size evolution of ordered SiGe islands grown by surface thermal diffusion on pit-patterned Si(100) surface, Nanoscale Res. Lett. 5, 1921 (2010).
  32. G. M. Vanacore, M. Zani, G. Isella, J. Osmond, M. Bollani, and A. Tagliaferri: Quantitative investigation of the influence of carbon surfactant on Ge surface diffusion and island nucleation on Si(100), Phys. Rev. B 82, 125456 (2010).
  33. M. Bollani, E. Bonera, D. Chrastina, A. Fedorov, V. Montuori, A. Picco, A. Tagliaferri, G. Vanacore, and R. Sordan: Ordered arrays of SiGe islands from low-energy PECVD, Nanoscale Res. Lett. 5, 1917 (2010).
  34. M. Bollani, D. Chrastina, A. Fedorov, G. Isella, and R. Sordan: Patterning of Si substrates for Ge/Si(001) islands grown by low-energy plasma enhanced CVD, Proc. SPIE Nanotechnology IV 7364, 7364 0I (2009).
  35. F. Pezzoli, E. Bonera, M. Bollani, S. Sanguinetti, E. Grilli, M. Guzzi, G. Isella, D. Chrastina, and H. von Känel: Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers, Acta Phys. Pol. A 116, 78 (2009).
  36. S. Binetti, M. Acciarri, M. Bollani, L. Fumagalli, H. von Känel, and S. Pizzini: Nanocrystalline silicon film grown by Low Energy Plasma Enhanced Chemical Vapor Deposition for optoelectronic applications, Thin Solid Films 487, 19 (2005).
  37. D. Chrastina, G. Isella, M. Bollani, B. Rössner, E. Müller, T. Hackbarth, E. Wintersberger, Z. Zhong, J. Stangl, and H. von Känel: Thin relaxed SiGe virtual substrates grown by low--energy plasma--enhanced chemical vapor deposition, J. Cryst. Growth 281, 281 (2005).
  38. M. Acciarri, S. Binetti, M. Bollani, A. Comotti, L. Fumagalli, S. Pizzini, and H. von Känel: Nanocrystalline silicon film grown by LEPECVD for photovoltaic applications, Sol. Energ. Mat. Sol. C. 87, 11 (2005).
  39. F. Pezzoli, L. Martinelli, E. Grilli, M. Guzzi, S. Sanguinetti, M. Bollani, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, and G. Bauer: Raman spectroscopy of Si1-xGex epilayers, Mat. Sci. Eng. B 124--125, 127 (2005).
  40. H. von Känel, D. Chrastina, B. Rössner, G. Isella, J. P. Hague, and M. Bollani: High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition, Microelectron. Eng. 76, 278 (2004).
  41. A. Marzegalli, F. Montalenti, M. Bollani, L. Miglio, G. Isella, D. Chrastina, and H. von Känel: Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain-dependent dislocation nature, Microelectron. Eng. 76, 289 (2004).
  42. D. Chrastina, G. Isella, B. Rössner, M. Bollani, E. Müller, T. Hackbarth, and H. von Känel: High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition, Thin Solid Films 459, 37 (2004).
  43. L. Martinelli, A. Marzegalli, P. Raiteri, M. Bollani, F. Montalenti, L. Miglio, D. Chrastina, G. Isella, and H. von Känel: Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data, Appl. Phys. Lett. 84, 2895 (2004).
  44. M. Bollani, E. Müller, G. Isella, S. Signoretti, D. Chrastina, and H. von Känel: Dislocation density and structure in Si1-xGex buffer layers deposited by LEPECVD, Inst. Phys. Conf. Ser. 180, 247 (2004).
  45. T. Hackbarth, H.-J. Herzog, K.-H. Hieber, U. König, M. Bollani, D. Chrastina, and H. von Känel: Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition, Appl. Phys. Lett. 83, 5464 (2003).
  46. M. Bollani, E. Müller, S. Signoretti, C. Beeli, G. Isella, M. Kummer, and H. von Känel: Compressively strained Ge channels on relaxed SiGe buffer layers, Mat. Sci. Eng. B 101, 102 (2003).
  47. M. Bollani, R. Piagge, and D. Narducci: Modulation of Si(100) electronic surface density due to supramolecular interactions of gaseous molecules with self-assembled organic monolayers, Mat. Sci. Eng. C 15, 253 (2001).
  48. M. Bollani, R. Piagge, A. Charaï, and D. Narducci: Experimental evidence and computational analysis of the electronic density modulation induced by gaseous molecules at Si(001) surfaces upon self-assembling organic monolayer, Appl. Surf. Sci. 175--176, 379 (2001).
  49. M. Bollani, M. Portail, J.-M. Layet, A. Charaï, and D. Narducci: Final evidence for H termination of HF-treated Si surfaces: a comparative study by high-energy and vibrational spectroscopies, Mat. Sci. Eng. B 73, 240 (2000).
  50. M. Bollani, L. Fares, A. Charaï, and D. Narducci: Chemically induced disordering of Si (100) surfaces upon SC1/SC2 etching analysed by high-resolution transmission electron microscopy, Mat. Sci. Eng. B 73, 154 (2000).

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Last updated: 11th July 2016