L-NESS

Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Posters presented at XTOP 2014

For MNE 2014 posters follow this link: MNE 2014

X-ray nanodiffraction in lithographically-defined semiconductor structures

Daniel Chrastina, Valeria Mondiali, Monica Bollani, Jacopo Frigerio, Marco Fiocco, Emiliano Bonera

Publications

  1. D. Scopece, F. Montalenti, M. Bollani, D. Chrastina, and E. Bonera: Strained Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis, Semicond. Sci. Technol. 29, 095012 (2014).
  2. E. Bonera, M. Bollani, D. Chrastina, F. Pezzoli, A. Picco, O. G. Schmidt, and D. Terziotti: Substrate strain manipulation by nanostructure perimeter forces, J. Appl. Phys. 113, 164308 (2013).
  3. M. Bollani, D. Chrastina, M. Fiocco, V. Mondiali, J. Frigerio, L. Gagliano, and E. Bonera: Lithographically-defined low dimensional SiGe nanostripes as silicon stressors, J. Appl. Phys. 112, 094318 (2012).
  4. D. Chrastina, G. M. Vanacore, M. Bollani, P. Boye, S. Schöder, M. Burghammer, R. Sordan, G. Isella, M. Zani, and A. Tagliaferri: Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction, Nanotechnology 23, 155702 (2012).

Dislocation engineering in SiGe on periodic and aperiodic Si(001) templates studied by fast scanning X-ray nanodiffraction

Valeria Mondiali, Monica Bollani, Stefano Cecchi, Marie-Ingrid Richard, Tobias Schulli, Gilbert Chahine, Daniel Chrastina

Publications

  1. J. G. Fiorenza, G. Braithwaite, C. W. Leitz, M. T. Currie, J. Yap, F. Singaporewala, V. K. Yang, T. A. Langdo, J. Carlin, M. Somerville, A. Lochtefeld, H. Badawi, and M. T. Bulsara: Film thickness constraints for manufacturable strained silicon CMOS, Semicond. Sci. Technol. 19, L4 (2004).
  2. M. Grydlik, F. Boioli, H. Groiss, R. Gatti, M. Brehm, F. Montalenti, B. Devincre, F. Schäffler, and L. Miglio: Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001), Appl. Phys. Lett. 101, 013119 (2012).
  3. T. Etzelstorfer, M. J. Süess, G. L. Schiefler, V. L. R. Jacques, D. Carbone, D. Chrastina, G. Isella, R. Spolenak, J. Stangl, H. Sigg, and A. Diaz: Scanning x-ray strain microscopy of inhomogeneously strained Ge micro-bridges, J. Synchrotron Rad. 21, 111 (2014).
  4. V. Mondiali, M. Bollani, S. Cecchi, M.-I. Richard, T. Schülli, G. Chahine, and D. Chrastina: Dislocation engineering in SiGe on periodic and aperiodic Si(001) templates studied by fast scanning X-ray nanodiffraction, Appl. Phys. Lett. 104, 021918 (2014).
  5. G. A. Chahine, M.-I. Richard, R. A. Homs-Regojo, T. N. Tran-Caliste, D. Carbone, V. L. R. Jaques, R. Grifone, P. Boesecke, J. Katzer, I. Costina, H. Djazouli, T. Schroeder, and T. U. Schülli: Imaging of strain and lattice orientation by quick scanning X-ray microscopy combined with three-dimensional reciprocal space mapping, J. Appl. Cryst. 47, 762 (2014).

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