Posters presented at MNE 2014
SiGe stressors for tensile strain in Ge membranes by top-down e-beam lithography
Valeria Mondiali, Monica Bollani, Daniel Chrastina, Jacopo Frigerio and Daniele Scopece and Francesco Montalenti and Emiliano Bonera
Publications
- R. A. Minamisawa, M. J. Süess, R. Spolenak, J. Faist, C. David, J. Gobrecht, K. K. Bourdelle, and H. Sigg: Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%, Nature Communications 3, 1096 (2012).
- M. J. Süess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg: Analysis of enhanced light emission from highly strained germanium micro bridges, Nature Photonics 7, 466 (2013).
- M. Bollani, D. Chrastina, M. Fiocco, V. Mondiali, J. Frigerio, L. Gagliano, and E. Bonera: Lithographically-defined low dimensional SiGe nanostripes as silicon stressors, J. Appl. Phys. 112, 094318 (2012).
- E. Bonera, M. Bollani, D. Chrastina, F. Pezzoli, A. Picco, O. G. Schmidt, and D. Terziotti: Substrate strain manipulation by nanostructure perimeter forces, J. Appl. Phys. 113, 164308 (2013).
- D. Scopece, F. Montalenti, M. Bollani, D. Chrastina, and E. Bonera: Strained Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis, Semicond. Sci. Technol. 29, 095012 (2014).
- V. A. Shah, M. Myronov, C. Wongwanitwatana, L. Bawden, M. J. Prest, J. S. Richardson-Bullock, S. Rhead, E. H. C. Parker, T. E. Whall, and D. R. Leadley: Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures, Sci. Technol. Adv. Mat. 13, 055002 (2012).
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