Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Davide Colombo


Davide Colombo is currently a process engineer at Micron in Agrate Brianza, Italy

Davide Colombo


Main Research Interest


  1. G. M. Vanacore, M. Zani, M. Bollani, D. Colombo, G. Isella, J. Osmond, R. Sordan, and A. Tagliaferri: Size evolution of ordered SiGe islands grown by surface thermal diffusion on pit-patterned Si(100) surface, Nanoscale Res. Lett. 5, 1921 (2010).
  2. R. Sordan, A. Miranda, F. Traversi, D. Colombo, D. Chrastina, G. Isella, M. Masserini, L. Miglio, K. Kern, and K. Balasubramanian: Vertical arrays of nanofluidic channels fabricated without nanolithography, Lab Chip 9, 1556 (2009).
  3. A. Trita, F. Bragheri, I. Cristiani, V. Degiorgio, D. Chrastina, D. Colombo, G. Isella, H. von Känel, F. Gramm, E. Müller, M. Döbeli, E. Bonera, R. Gatti, F. Pezzoli, E. Grilli, M. Guzzi, and L. Miglio: Impact of misfit dislocations on wavefront distortion in Si/SiGe/Si optical waveguides, Opt. Commun. 282, 4716 (2009).
  4. R. Sordan, A. Miranda, J. Osmond, D. Colombo, D. Chrastina, G. Isella, and H. von Känel: Gate-controlled rectifying barrier in a two-dimensional hole gas, Nanotechnology 19, 335201 (2008).
  5. D. Colombo, E. Grilli, M. Guzzi, S. Sanguinetti, S. Marchionna, M. Bonfanti, A. Fedorov, H. von Känel, G. Isella, and E. Müller: Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates, J. Appl. Phys. 101, 103519 (2007).
  6. D. Colombo, E. Grilli, M. Guzzi, S. Sanguinetti, A. Fedorov, H. von Känel, and G. Isella: Study of thermal strain relaxation in GaAs grown on Ge/Si substrates, J. Lumin. 121, 375 (2006).
  7. A. R. Khan, K. Mundboth, J. Stangl, G. Bauer, H. von Känel, A. Federov, G. Isella, and D. Colombo: X-ray investigation of thick epitaxial GaAs/InGaAs layers on Ge pseudosubstrates.In IEEE International Conference on Emerging Technologies (2005).
  8. D. Colombo, S. Sanguinetti, E. Grilli, M. Guzzi, L. Martinelli, M. Gurioli, P. Frigeri, G. Trevisi, and S. Franchi: Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer, J. Appl. Phys. 94, 6513 (2003).

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