L-NESS

Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Aida Mansouri

Post-doc

Contact

e-mail:
tel:Como: +39 031 332 7359
fax:Como: +39 031 332 7617
address:Politecnico di Milano
Polo di Como
Via Anzani 42
22100 Como
Italy
office:Via Anzani 1.02

Aida Mansouri

Main Research Interest

Publications

  1. D. Z. Vasiljevic, A. Mansouri, L. Anzi, R. Sordan, and G. M. Stojanović: Performance analysis of flexible ink-jet printed humidity sensors based on graphene oxide, IEEE Sensors J. 18, 4378 (2018).
  2. L. Anzi, A. Mansouri, P. Pedrinazzi, E. Guerriero, M. Fiocco, A. Pesquera, A. Centeno, A. Zurutuza, A. Behnam, E. A. Carrion, E. Pop, and R. Sordan: Ultra-low contact resistance in graphene devices at the Dirac point, 2D Materials 5, 025014 (2018).
  3. T. Carey, S. Cacovich, G. Divitini, J. Ren, A. Mansouri, J. M. Kim, C. Wang, C. Ducati, R. Sordan, and F. Torrisi: Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics, Nature Communications 8, 1202 (2017).
  4. E. Guerriero, P. Pedrinazzi, A. Mansouri, O. Habibpour, M. Winters, N. Rorsman, A. Behnam, E. A. Carrion, A. Pesquera, A. Centeno, A. Zurutuza, E. Pop, H. Zirath, and R. Sordan: High-gain graphene transistors with a thin AlOx top-gate oxide, Sci. Reports 7, 2419 (2017).

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