L-NESS

Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Viktor Kopp

Post-doctoral researcher

Contact

e-mail:
tel:Como: +39 031 332 7303
fax:Como: +39 031 332 7617
address:Politecnico di Milano
Polo di Como
Via Anzani 42
22100 Como
Italy
office:Via Anzani 1.06

Viktor Kopp

Main Research Interest

Publications

  1. V. S. Kopp, V. M. Kaganer, M. V. Baidakova, W. V. Lundin, A. E. Nikolaev, E. V. Verkhovtceva, M. A. Yagovkina, and N. Cherkashin: X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy, J. Appl. Phys. 115, 073507 (2014).
  2. V. S. Kopp, V. M. Kaganer, B. Jenichen, and O. Brandt: Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy, J. Appl. Cryst. 47, 256 (2014).
  3. V. S. Kopp, V. M. Kaganer, G. Capellini, M. De Seta, and P. Zaumseil: X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates, Phys. Rev. B 85, 245311 (2012).
  4. W. Lefebvre, V. Kopp, and C. Pareige: Nano-precipitates made of atomic pillars revealed by single atom detection in a Mg--Nd alloy, Appl. Phys. Lett. 100, 141906 (2012).
  5. V. S. Kopp, V. M. Kaganer, J. Schwarzkopf, F. Waidick, T. Remmele, A. Kwasniewski, and M. Schmidbauer: X-ray diffraction from nonperiodic layered structures with correlations: analytical calculation and experiment on mixed Aurivillius films, Acta Crystallogr. A 68, 148 (2012).
  6. V. Kopp, W. Lefebvre, and C. Pareige: Determination of the Mg-rich phase boundary of the binary Mg--Nd phase diagram by means of atom probe tomography, J. Phase Equilib. Diffus. 32, 298 (2011).
  7. A. A. Chernyuk, V. S. Kopp, and V. I. Sugakov: Exciton condensation in semiconductor quantum wells in nonuniform electric field, Ukr. J. Phys. 52, 695 (2007).

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Last updated: 25th May 2017