L-NESS

Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Dario Narducci

Assistant professor

Contact

e-mail:
tel:Milano: +39 02 6448 5137
fax:Milano: +39 02 6448 5400
address:Università di Milano Bicocca
Dipartimento di Scienza dei Materiali
Via Cozzi 53
20125 Milano
Italy
web:mater.unimib.it

Dario Narducci

Education

Main Research Interest

Publications

  1. A. L. Donne, M. Acciarri, D. Narducci, S. Marchionna, and S. Binetti: Encapsulating Eu3+ complex doped layers to improve Si-based solar cell efficiency, Prog. Photovolt: Res. Appl. 17, 519 (2009).
  2. G. F. Cerofolini, A. Giussani, A. Modelli, D. Mascolo, D. Ruggiero, D. Narducci, and E. Romano: Chemical, energetic, and geometric heterogeneity of device-quality (100) surfaces of single crystalline silicon after HFaq etching, Appl. Surf. Sci. 254, 5781 (2008).
  3. M. Bollani, R. Piagge, and D. Narducci: Modulation of Si(100) electronic surface density due to supramolecular interactions of gaseous molecules with self-assembled organic monolayers, Mat. Sci. Eng. C 15, 253 (2001).
  4. M. Bollani, R. Piagge, A. Charaï, and D. Narducci: Experimental evidence and computational analysis of the electronic density modulation induced by gaseous molecules at Si(001) surfaces upon self-assembling organic monolayer, Appl. Surf. Sci. 175--176, 379 (2001).
  5. M. Bollani, M. Portail, J.-M. Layet, A. Charaï, and D. Narducci: Final evidence for H termination of HF-treated Si surfaces: a comparative study by high-energy and vibrational spectroscopies, Mat. Sci. Eng. B 73, 240 (2000).
  6. M. Bollani, L. Fares, A. Charaï, and D. Narducci: Chemically induced disordering of Si (100) surfaces upon SC1/SC2 etching analysed by high-resolution transmission electron microscopy, Mat. Sci. Eng. B 73, 154 (2000).
  7. C. Alfonso, A. Charaï, A. Armigliato, and D. Narducci: Transmission electron microscopy investigation of tin sub-oxide nucleation upon SnO2 deposition on silicon, Appl. Phys. Lett. 68, 1207 (1996).
  8. D. Narducci, C. R. Guarnieri, and J. J. Cuomo: Defect clustering and boron electrical deactivation in p-doped polycrystalline diamond films, J. Electrochem. Soc. 138, 2446 (1991).
  9. D. Narducci and J. J. Cuomo: Boron diffusivity in nonimplanted diamond single crystals measured by impedance spectroscopy, J. Appl. Phys. 68, 1184 (1990).
  10. S. Pizzini, N. Buttá, D. Narducci, and M. Palladino: Thick film ZnO resistive gas sensors, J. Electrochem. Soc. 136, 1945 (1989).

Teaching

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Last updated: 11th July 2016