Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Maurizio Acciarri

Researcher, Physics and Chemistry of Semiconductors


tel:Milano: +39 02 6448 5136
fax:Milano: +39 02 6448 5400
address:Università di Milano Bicocca
Dipartimento di Scienza dei Materiali
Via Cozzi 53
20125 Milano

Maurizio Acciarri


Main Research Interest


  1. G. Micard, G. Hahn, B. Terheiden, D. Chrastina, G. Isella, T. Moiseev, D. Cavalcoli, A. Cavallini, S. Binetti, M. Acciarri, A. Le Donne, M. Texier, and B. Pichaud: Electrical and structural properties of p-type nanocrystalline silicon grown by LEPECVD for photovoltaic applications, phys. stat. sol. (c) 7, 712 (2010).
  2. A. L. Donne, M. Acciarri, D. Narducci, S. Marchionna, and S. Binetti: Encapsulating Eu3+ complex doped layers to improve Si-based solar cell efficiency, Prog. Photovolt: Res. Appl. 17, 519 (2009).
  3. J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri, and H. von Känel: Ultra low dark current Ge/Si(100) photodiodes with low thermal budget, Appl. Phys. Lett. 94, 201106 (2009).
  4. S. Binetti, J. Libal, M. Acciarri, M. Di Sabatino, H. Nordmark, E. J. Ovrelid, J. C. Walmsley, and R. Holmestad: Study of defects and impurities in multicrystalline silicon grown from metallurgical silicon feedstock, Mat. Sci. Eng. B 159--160, 274 (2009).
  5. J. Libal, S. Novaglia, M. Acciarri, S. Binetti, R. Petres, J. Arumughan, R. Kopecek, and A. Prokopenko: Effect of compensation and of metallic impurities on the electrical properties of Cz-grown solar grade silicon, J. Appl. Phys. 104, 104507 (2008).
  6. S. M. Hossain, A. Anopchenko, S. Prezioso, L. Ferraioli, L. Pavesi, G. Pucker, P. Bellutti, S. Binetti, and M. Acciarri: Subband gap photoresponse of nanocrystalline silicon in a metal-oxide-semiconductor device, J. Appl. Phys. 104, 074917 (2008).
  7. A. Le Donne, S. Binetti, G. Isella, B. Pichaud, M. Texier, M. Acciarri, and S. Pizzini: Structural characterization of nc-Si films grown by low-energy PECVD on different substrates, Appl. Surf. Sci. 254, 2804 (2008).
  8. S. Binetti, M. Acciarri, and J. Libal: Impact of extended defects on the electrical properties of solar grade multicrystalline silicon for solar cell application, Solid State Phenom. 131--133, 419 (2008).
  9. A. Le Donne, S. Binetti, G. Isella, B. Pichaud, M. Texier, M. Acciarri, and S. Pizzini: Advances in structural characterization of thin film nanocrystalline silicon for photovoltaic applications, Solid State Phenom. 131--133, 33 (2008).
  10. M. Acciarri, S. Binetti, A. Le Donne, S. Marchionna, M. Vimercati, J. Libal, R. Kopecek, and K. Wambach: Effect of P-induced gettering on extended defects in n-type multicrystalline silicon, Prog. Photovolt: Res. Appl. 15, 375 (2007).
  11. M. Acciarri, S. Binetti, M. Bollani, A. Comotti, L. Fumagalli, S. Pizzini, and H. von Känel: Nanocrystalline silicon film grown by LEPECVD for photovoltaic applications, Sol. Energ. Mat. Sol. C. 87, 11 (2005).
  12. S. Binetti, A. Le Donne, and M. Acciarri: Processing step-related upgrading of silicon-based solar cells detected by photoluminescence spectroscopy, Sol. Energ. Mat. Sol. C. 86, 11 (2005).
  13. S. Binetti, M. Acciarri, M. Bollani, L. Fumagalli, H. von Känel, and S. Pizzini: Nanocrystalline silicon film grown by Low Energy Plasma Enhanced Chemical Vapor Deposition for optoelectronic applications, Thin Solid Films 487, 19 (2005).
  14. A. Le Donne, S. Binetti, M. Acciarri, and S. Pizzini: Electrical characterization of electron irradiated X-rays detectors based on 4H-SiC epitaxial layers, Diam. Relat. Mater. 13, 414 (2004).
  15. M. Acciarri, C. Cirelli, S. Pizzini, S. Binetti, A. Castaldini, and A. Cavallini: Study of the correlation between radiative and non-radiative recombination channels in silicon, J. Phys. Condens. Matt. 14, 13223 (2002).
  16. M. Acciarri, S. Pizzini, G. Simone, D. Jones, and V. Palermo: Advances in silicon surface characterisation using light beam injection techniques, Mat. Sci. Eng. B 73, 235 (2000).
  17. S. Pizzini, M. Acciarri, E. Leoni, and A. Le Donne: About the D1 and D2 dislocation luminescence and its correlation with oxygen segregation, phys. stat. sol. (b) 222, 141 (2000).
  18. M. Acciarri, S. Binetti, M. Garavaglia, and S. Pizzini: Detection of junction failures and other defects in silicon and III-V devices using the LBIC technique in lateral configuration, Mat. Sci. Eng. B 42, 208 (2000).


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Last updated: 25th May 2017