L-NESS

Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Francesco Montalenti

Researcher

Contact

e-mail:
tel:Milano: +39 02 6448 5226
fax:Milano: +39 02 6448 5400
address:Università di Milano Bicocca
Dipartimento di Scienza dei Materiali
Via Cozzi 53
20125 Milano
Italy
web:mater.unimib.it

Francesco Montalenti

Education

Main Research Interest

Publications

  1. C. Frigeri, D. Scarpellini, A. Fedorov, S. Bietti, C. Somaschini, V. Grillo, L. Esposito, M. Salvalaglio, A. Marzegalli, F. Montalenti, and S. Sanguinetti: Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires, Appl. Surf. Sci. 395, 29 (2015).
  2. F. Isa, M. Salvalaglio, Y. Arroyo Rojas Dasilva, A. Jung, G. Isella, R. Erni, B. Timotijevic, P. Niedermann, P. Gröning, F. Montalenti, and H. von Känel: Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking, Appl. Phys. Lett. 109, 182112 (2016).
  3. F. Isa, A. Jung, M. Salvalaglio, Y. Arroyo Rojas Dasilva, I. Marozau, M. Meduňa, M. Barget, A. Marzegalli, G. Isella, R. Erni, F. Pezzoli, E. Bonera, P. Niedermann, O. Sereda, P. Gröning, F. Montalenti, and H. von Känel: Strain engineering in highly mismatched SiGe/Si heterostructures, Mat. Sci. Semicond. Process. online (2016).
  4. F. Isa, A. Jung, M. Salvalaglio, Y. Arroyo Rojas Dasilva, M. Meduňa, M. Barget, T. Kreiliger, G. Isella, R. Erni, F. Pezzoli, E. Bonera, P. Niedermann, K. Zweiacker, A. Neels, A. Dommann, P. Gröning, F. Montalenti, and H. von Känel: Elastic and plastic stress relaxation in highly mismatched SiGe/Si crystals, MRS Advances online (2016).
  5. M. Bollani, D. Chrastina, R. Ruggeri, G. Nicotra, L. Gagliano, E. Bonera, V. Mondiali, A. Marzegalli, F. Montalenti, C. Spinella, and L. Miglio: Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning, Nanotechnology 27, 425301 (2016).
  6. F. Isa, M. Salvalaglio, Y. A. R. Dasilva, A. Jung, G. Isella, R. Erni, P. Niedermann, P. Gröning, F. Montalenti, and H. von Känel: From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructures, Acta Mater. 114, 97 (2016).
  7. R. Bergamaschini, M. Salvalaglio, A. Scaccabarozzi, F. Isa, C. V. Falub, G. Isella, H. von Känel, F. Montalenti, and L. Miglio: Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates, J. Cryst. Growth 440, 86 (2016).
  8. M. Bollani, D. Chrastina, L. Gagliano, L. Rossetto, D. Scopece, M. Barget, V. Mondiali, J. Frigerio, M. Lodari, F. Pezzoli, F. Montalenti, and E. Bonera: Local uniaxial tensile strain in germanium up to 4% by epitaxial nanostructures, Appl. Phys. Lett. 107, 083101 (2015).
  9. D. Scarpellini, C. Somaschini, A. Fedorov, S. Bietti, C. Frigeri, V. Grillo, L. Esposito, M. Salvalaglio, A. Marzegalli, F. Montalenti, E. Bonera, P. G. Medaglia, and S. Sanguinetti: InAs/GaAs sharply defined axial heterostructures in self-assisted nanowires, Nano Lett. 15, 3677 (2015).
  10. D. Scopece, F. Montalenti, M. Bollani, D. Chrastina, and E. Bonera: Strained Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis, Semicond. Sci. Technol. 29, 095012 (2014).
  11. F. Isa, A. Marzegalli, A. G. Taboada, C. V. Falub, G. Isella, F. Montalenti, H. von Känel, and L. Miglio: Onset of vertical threading dislocations in Si1-xGex/Si (001) at a critical Ge concentration, APL Materials 1, 052109 (2013).
  12. A. Marzegalli, F. Isa, H. Groiss, E. Müller, C. V. Falub, A. G. Taboada, P. Niedermann, G. Isella, F. Schäffler, F. Montalenti, H. von Känel, and L. Miglio: Unexpected dominance of vertical dislocations in high-misfit Ge/Si(001) films and their elimination by deep substrate patterning, Adv. Mater. 25, 4408 (2013).
  13. G. Chen, B. Sanduijav, D. Matei, G. Springholz, D. Scopece, M. J. Beck, F. Montalenti, and L. Miglio: Formation of Ge nanoripples on vicinal Si (1 1 10): From Stranski-Krastanow seeds to a perfectly faceted wetting layer, Phys. Rev. Lett. 108, 055503 (2012).
  14. G. Vastola, M. Grydlik, M. Brehm, T. Fromherz, G. Bauer, F. Boioli, L. Miglio, and F. Montalenti: How pit facet inclination drives heteroepitaxial island positioning on patterned substrates, Phys. Rev. B 84, 155415 (2011).
  15. R. Bergamaschini, F. Montalenti, and L. Miglio: Optimal growth conditions for selective Ge islands positioning on pit-patterned Si(001), Nanoscale Res. Lett. 5, 1873 (2010).
  16. C. Somaschini, S. Bietti, N. Koguchi, F. Montalenti, C. Frigeri, and S. Sanguinetti: Self-assembled GaAs islands on Si by droplet epitaxy, Appl. Phys. Lett. 97, 053101 (2010).
  17. M. Brehm, F. Montalenti, M. Grydlik, G. Vastola, H. Lichtenberger, N. Hrauda, M. J. Beck, T. Fromherz, F. Schäffler, L. Miglio, and G. Bauer: Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski--Krastanow growth onset, Phys. Rev. B 80, 205321 (2009).
  18. M. Ceriotti, S. Cereda, F. Montalenti, L. Miglio, and M. Bernasconi: Ab initio study of the diffusion and decomposition pathways of SiHx species on Si(100), Phys. Rev. B 79, 165437 (2009).
  19. D. Digiuni, R. Gatti, and F. Montalenti: Aspect-ratio-dependent driving force for nonuniform alloying in Stranski-Krastanow islands, Phys. Rev. B 80, 155436 (2009).
  20. P. L. Novikov, A. Le Donne, S. Cereda, L. Miglio, S. Pizzini, S. Binetti, M. Rondanini, C. Cavallotti, D. Chrastina, T. Moiseev, H. von Känel, G. Isella, and F. Montalenti: Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments, Appl. Phys. Lett. 94, 051904 (2009).
  21. T. U. Schülli, G. Vastola, M.-I. Richard, A. Malachias, G. Renaud, F. Uhlík, F. Montalenti, G. Chen, L. Miglio, F. Schäffler, and G. Bauer: Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substrates, Phys. Rev. Lett. 102, 025502 (2009).
  22. F. Uhlík, R. Gatti, and F. Montalenti: A fast computational method for determining equilibrium concentration profiles in intermixed nanoislands, J. Phys. Condens. Matt. 21, 084217 (2009).
  23. G. Vastola, A. Marzegalli, F. Montalenti, and L. Miglio: Strain and strain-release engineering at epitaxial SiGe islands on Si(001) for microelectronic applications, Mat. Sci. Eng. B 159--160, 90 (2009).
  24. S. Cereda, F. Zipoli, M. Bernasconi, L. Miglio, and F. Montalenti: Thermal-hydrogen promoted selective desorpion and enhanced mobility of adsorbed radicals in silicon film growth, Phys. Rev. Lett. 100, 046105 (2008).
  25. R. Gatti, F. Uhlík, and F. Montalenti: Intermixing in heteroepitaxial islands: fast, self-consistent calculation of the concentration profile minimizing the elastic energy, New J. Phys. 10, 083039 (2008).
  26. R. Gatti, A. Marzegalli, V. Zinovyev, F. Montalenti, and L. Miglio: Modeling the plastic relaxation onset in realistic SiGe islands on Si(001), Phys. Rev. B 78, 184104 (2008).
  27. G. Vastola, F. Montalenti, and L. Miglio: Understanding the elastic relaxation mechanisms of strain in Ge islands on pit-patterned Si(001) substrates, J. Phys. Condens. Matt. 20, 454217 (2008).
  28. F. Zipoli, S. Cereda, M. Ceriotti, M. Bernasconi, L. Miglio, and F. Montalenti: First principles study of Ge/Si exchange mechanisms at the Si(001) surface, Appl. Phys. Lett. 92, 191908 (2008).
  29. S. Cereda, F. Montalenti, and L. Miglio: Interaction of SiHx+ precursors with hydrogen-covered Si surfaces: Impact dynamics and adsorption sites, Surf. Sci. 601, 3970 (2007).
  30. S. Cereda, M. Ceriotti, F. Montalenti, M. Bernasconi, and L. Miglio: Quantitative estimate of H abstraction by thermal SiH3 on hydrogenated Si(001)(2×1), Phys. Rev. B 75, 235311 (2007).
  31. S. Cereda and F. Montalenti: Atomic-scale modeling of next-layer nucleation and step flow at the Ge(105) rebonded-step surface, Phys. Rev. B 75, 195321 (2007).
  32. A. Marzegalli, V. A. Zinovyev, F. Montalenti, A. Rastelli, M. Stoffel, T. Merdzhanova, O. G. Schmidt, and L. Miglio: Critical shape and size for dislocation nucleation in Si1-xGex islands on Si(001), Phys. Rev. Lett. 99, 235505 (2007).
  33. M. Rondanini, S. Cereda, F. Montalenti, L. Miglio, and C. Cavallotti: A multiscale model of the plasma assisted deposition of crystalline silicon, Surf. Coat. Technol. 201, 8863 (2007).
  34. Z. Zhong, W. Schwinger, F. Schäffler, G. Bauer, G. Vastola, F. Montalenti, and L. Miglio: Delayed plastic relaxation on patterned Si substrates: Coherent SiGe pyramids with dominant {111} facets, Phys. Rev. Lett. 98, 176102 (2007).
  35. S. Cereda, F. Montalenti, M. Cogoni, D. Branduardi, M. W. Radny, P. V. Smith, and L. Miglio: Binding sites for SiH2/Si(0 0 1): A combined ab initio, tight-binding, and classical investigation, Surf. Sci. 600, 4445 (2006).
  36. R. Marchetti, F. Montalenti, L. Miglio, G. Capellini, M. D. Seta, and F. Evangelisti: Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si--Ge nanostructures, Appl. Phys. Lett. 87, 261919 (2005).
  37. A. Marzegalli, F. Montalenti, and L. Miglio: Atomistic simulation of a 60o shuffle dislocation segment migrating in a Ge/SiGe(001) epitaxial film, J. Phys. Condens. Matt. 17, 7505 (2005).
  38. A. Marzegalli, F. Montalenti, and L. Miglio: Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers, Appl. Phys. Lett. 86, 041912 (2005).
  39. L. Martinelli, A. Marzegalli, P. Raiteri, M. Bollani, F. Montalenti, L. Miglio, D. Chrastina, G. Isella, and H. von Känel: Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data, Appl. Phys. Lett. 84, 2895 (2004).
  40. A. Marzegalli, F. Montalenti, M. Bollani, L. Miglio, G. Isella, D. Chrastina, and H. von Känel: Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain-dependent dislocation nature, Microelectron. Eng. 76, 289 (2004).
  41. F. Montalenti, P. Raiteri, D. B. Migas, H. von Känel, A. Rastelli, C. Manzano, G. Costantini, U. Denker, O. G. Schmidt, K. Kern, and L. Miglio: Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001), Phys. Rev. Lett. 93, 216102 (2004).

Teaching

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Last updated: 11th July 2016