Tamara Moiseev
Researcher
Contact
e-mail: | |
tel: | Como: +39 031 332 7357 |
fax: | Como: +39 031 332 7617 |
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address: | Politecnico di Milano |
| Polo di Como |
| Via Anzani 42 |
| 22100 Como |
| Italy |
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office: | Via Anzani 1.03 |
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Education
- PhD in Physics from Dublin City University, Ireland
- Degree in Physics from University of Bucharest, Romania
Main Research Interest
Publications
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T. Moiseev, D. Chrastina, and G. Isella: Plasma composition by mass spectrometry in a Ar-SiH4-H2 LEPECVD process during nc-Si deposition, Plasma Chem. Plasma Processing 31, 157 (2011).
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G. Micard, G. Hahn, B. Terheiden, D. Chrastina, G. Isella, T. Moiseev, D. Cavalcoli, A. Cavallini, S. Binetti, M. Acciarri, A. Le Donne, M. Texier, and B. Pichaud: Electrical and structural properties of p-type nanocrystalline silicon grown by LEPECVD for photovoltaic applications, phys. stat. sol. (c) 7, 712 (2010).
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T. Moiseev, G. Isella, D. Chrastina, and C. Cavallotti: Langmuir probe plasma parameters and kinetic rates in a Ar--SiH4--H2 plasma during nc-Si films deposition for photovoltaic applications, J. Phys. D: Appl. Phys. 42, 225202 (2009).
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C. Cavallotti, M. Rondanini, T. Moiseev, D. Chrastina, and G. Isella: An investigation of the gas phase and surface chemistry active during the PECVD of nc-silicon: A detailed model of the gas phase and surface chemistry, ECS Transactions 25, 107 (2009).
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T. Moiseev, D. Chrastina, G. Isella, and C. Cavallotti: Plasma composition and kinetic reaction rates in a LEPECVD Ar-SiH4-H2 plasma during nc-Si films deposition for photovoltaic applications, ECS Transactions 25, 1065 (2009).
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T. Moiseev, D. Chrastina, G. Isella, and C. Cavallotti: Threshold ionization mass spectrometry in the presence of excited silane radicals, J. Phys. D: Appl. Phys. 42, 072003 (2009).
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P. L. Novikov, A. Le Donne, S. Cereda, L. Miglio, S. Pizzini, S. Binetti, M. Rondanini, C. Cavallotti, D. Chrastina, T. Moiseev, H. von Känel, G. Isella, and F. Montalenti: Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments, Appl. Phys. Lett. 94, 051904 (2009).
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M. Rondanini, C. Cavallotti, D. Ricci, D. Chrastina, G. Isella, T. Moiseev, and H. von Känel: An experimental and theoretical investigation of a magnetically confined dc plasma discharge, J. Appl. Phys. 104, 013304 (2008).
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T. Moiseev and D. C. Cameron: On the ion flux and energy gain during pulsed DC operation of an opposed target magnetron, Surf. Coat. Technol. 200, 5306 (2006).
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T. Moiseev and D. C. Cameron: Estimation of the electron temperature and density from space and time-resolved O.E.S. during pulsed DC operation of an opposed target magnetron.In SVC - 48th Annual Technical Conference Proceedings, 485--490 (2005).
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T. Moiseev and D. C. Cameron: Comparison of the operating characteristics of an opposed target magnetron using ferromagnetic and non-ferromagnetic targets, Surf. Coat. Technol. 200, 644 (2005).
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T. Moiseev and D. C. Cameron: A three-step algorithm for solving 2D inverse magnetostatic problems for magnetron design applications, Inv. Prob. Sci. Eng. 13, 279 (2005).
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T. Moiseev and D. C. Cameron: Pulsed dc operation of a Penning-type opposed target magnetron, J. Vac. Sci. Technol. A 23, 66 (2005).
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T. Moiseev: Study on photon sensitivity of silicon diodes related to materials used for shielding, Nucl. Instrum. Methods Phys. Rev. A 432, 527 (1999).
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T. Moiseev: Computational study of a small size neutron moderator for use on neutron dosemeters based on silicon diodes, Radiat. Prot. Dosim. 84, 399 (1999).
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T. Moiseev: Study of a moderator type electronic neutron dosemeter for personal dosimetry, Radiat. Prot. Dosim. 70, 93 (1999).
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J. Barthe, T. Lahaye, T. Moiseev, and G. Portal: Personal neutron diode dosemeter, Radiat. Prot. Dosim. 47, 397 (1993).
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