Stefano Sanguinetti
Associate Professor
Contact
e-mail: | |
tel: | Como: +39 031 332 7616 |
fax: | Como: +39 031 332 7617 |
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address: | Politecnico di Milano |
| Polo di Como |
| Via Anzani 42 |
| 22100 Como |
| Italy |
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office: | Via Anzani 1.06 |
web: | mater.unimib.it |
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Main Research Interest
Publications
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F. Cesura, S. Vichi, A. Tuktamyshev, S. Bietti, A. Fedorov, S. Sanguinetti, K. Iizuka, and S. Tsukamoto: Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling, J. Cryst. Growth 630, 127588 (2024).
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L. Anzi, A. Tuktamyshev, A. Fedorov, A. Zurutuza, S. Sanguinetti, and R. Sordan: Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate, npj 2D Mater. Appl. 6, 28 (2022).
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G. Tavani, A. Chiappini, A. Fedorov, F. Scotognella, S. Sanguinetti, D. Chrastina, and M. Bollani: Tailoring of embedded dielectric alumina film in AlGaAs epilayer by selective thermal oxidation, Opt. Mater. Express 12, 835 (2022).
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A. Tuktamyshev, A. Fedorov, S. Bietti, S. Vichi, K. D. Zeuner, K. D. Jöns, D. Chrastina, S. Tsukamoto, V. Zwiller, M. Gurioli, and S. Sanguinetti: Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates, Appl. Phys. Lett. 118, 133102 (2021).
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A. Ballabio, S. Bietti, A. Scaccabarozzi, L. Esposito, S. Vichi, A. Fedorov, A. Vinattieri, C. Mannucci, F. Biccari, A. Nemcsis, L. Toth, L. Miglio, M. Gurioli, G. Isella, and S. Sanguinetti: GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers, Sci. Reports 9, 17529 (2019).
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M. Azadmand, E. Bonera, D. Chrastina, S. Bietti, S. Tsukamoto, R. Nötzel, and S. Sanguinetti: Raman spectroscopy of epitaxial InGaN/Si in the central composition range, Jpn. J. Appl. Phys. 58, SC1020 (2019).
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M. Azadmand, L. Barabani, S. Bietti, D. Chrastina, E. Bonera, M. Acciarri, A. Fedorov, S. Tsukamoto, R. Nötzel, and S. Sanguinetti: Droplet controlled growth dynamics in molecular beam epitaxy of nitride semiconductors, Sci. Reports 8, 11278 (2018).
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F. Biccari, L. Esposito, C. Mannucci, A. G. Taboada, S. Bietti, A. Ballabio, A. Fedorov, G. Isella, H. von Känel, L. Miglio, S. Sanguinetti, A. Vinattieri, and M. Gurioli: Site-controlled natural GaAs(111) quantum dots fabricated on vertical GaAs/Ge microcrystals on deeply patterned Si(001) substrates, Nanosci. Nanotechnol. Lett. 9, 1108 (2017).
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C. Frigeri, D. Scarpellini, A. Fedorov, S. Bietti, C. Somaschini, V. Grillo, L. Esposito, M. Salvalaglio, A. Marzegalli, F. Montalenti, and S. Sanguinetti: Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires, Appl. Surf. Sci. 395, 29 (2015).
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R. Bergamaschini, S. Bietti, A. Castellano, C. Frigeri, C. V. Falub, A. Scaccabarozzi, M. Bollani, H. von Känel, L. Miglio, and S. Sanguinetti: Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars, J. Appl. Phys. 120, 245702 (2016).
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D. Scarpellini, C. Somaschini, A. Fedorov, S. Bietti, C. Frigeri, V. Grillo, L. Esposito, M. Salvalaglio, A. Marzegalli, F. Montalenti, E. Bonera, P. G. Medaglia, and S. Sanguinetti: InAs/GaAs sharply defined axial heterostructures in self-assisted nanowires, Nano Lett. 15, 3677 (2015).
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G. M. Vanacore, J. Hu, W. Liang, S. Bietti, S. Sanguinetti, and A. H. Zewail: Diffraction of quantum dots reveals nanoscale ultrafast energy localization, Nano Lett. 14, 6148 (2014).
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E. M. Sala, M. Bollani, S. Bietti, A. Fedorov, L. Esposito, and S. Sanguinetti: Ordered array of Ga droplets on GaAs(001) by local anodic oxidation, J. Vac. Sci. Technol. B 32, 061206 (2014).
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M. Bollani, S. Bietti, C. Frigeri, D. Chrastina, K. Reyes, P. Smereka, J. M. Millunchick, G. M. Vanacore, M. Burghammer, A. Tagliaferri, and S. Sanguinetti: Ordered arrays of embedded Ga nanoparticles on patterned silicon substrates, Nanotechnology 25, 205301 (2014).
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S. Bietti, A. Scaccabarozzi, C. Frigeri, M. Bollani, E. Bonera, C. V. Falub, H. von Känel, L. Miglio, and S. Sanguinetti: Monolithic integration of optical grade GaAs on Si(001) substrates deeply patterned at a micron scale, Appl. Phys. Lett. 103, 262106 (2013).
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S. Sanguinetti, M. Guzzi, E. Gatti, and M. Gurioli: Chapter 12 -- photoluminescence characterization of structural and electronic properties of semiconductor quantum wells.In G. Agostini and C. Lamberti (eds.), Heterostructures and Nanostructures (Second Edition), 509--556. Elsevier B.V. (2013).
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N. Accanto, S. Minari, L. Cavigli, S. Bietti, G. Isella, A. Vinattieri, S. Sanguinetti, and M. Gurioli: Kinetics of multiexciton complex in GaAs quantum dots on Si, Appl. Phys. Lett. 102, 053109 (2013).
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K. Reyes, P. Smereka, D. Nothern, J. Mirecki Millunchick, S. Bietti, C. Somaschini, S. Sanguinetti, and C. Frigeri: Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory, Phys. Rev. B 87, 165406 (2013).
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S. Bietti, S. Cecchi, C. Frigeri, E. Grilli, A. Fedorov, A. Vinattieri, M. Gurioli, G. Isella, and S. Sanguinetti: Fabrication of Ge-on-Si substrates for the integration of high-quality GaAs nanostructures on Si, ECS Transactions 50, 783 (2013).
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C. Frigeri, S. Bietti, G. Isella, and S. Sanguinetti: Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge virtual substrates on Si, Appl. Surf. Sci. 267, 86 (2013).
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S. Minari, L. Cavigli, F. Sarti, M. Abbarchi, N. Accanto, G. Muñoz Matutano, S. Bietti, S. Sanguinetti, A. Vinattieri, and M. Gurioli: Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates, Appl. Phys. Lett. 101, 172105 (2012).
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L. Cavigli, S. Bietti, N. Accanto, S. Minari, M. Abbarchi, G. Isella, C. Frigeri, A. Vinattieri, M. Gurioli, and S. Sanguinetti: High temperature single photon emitter monolithically integrated on silicon, Appl. Phys. Lett. 100, 231112 (2012).
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L. Cavigli, S. Bietti, M. Abbarchi, C. Somaschini, A. Vinattieri, M. Gurioli, A. Fedorov, G. Isella, E. Grilli, and S. Sanguinetti: Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si, J. Phys. Condens. Matt. 24, 104017 (2012).
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S. Bietti, L. Cavigli, M. Abbarchi, A. Vinattieri, M. Gurioli, A. Fedorov, S. Cecchi, F. Isa, G. Isella, and S. Sanguinetti: High quality GaAs quantum nanostructures grown by droplet epitaxy on Ge and Ge-on-Si substrates, phys. stat. sol. (c) 9, 202 (2012).
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L. Cavigli, M. Abbarchi, S. Bietti, C. Somaschini, S. Sanguinetti, N. Koguchi, A. Vinattieri, and M. Gurioli: Individual GaAs quantum emitters grown on Ge substrates, Appl. Phys. Lett. 98, 103104 (2011).
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S. Bietti, C. Somaschini, N. Koguchi, C. Frigeri, and S. Sanguinetti: Self-assembled GaAs local artificial substrates on Si by droplet epitaxy, J. Cryst. Growth 323, 267 (2011).
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C. Somaschini, S. Bietti, A. Fedorov, N. Koguchi, and S. Sanguinetti: Outer zone morphology in GaAs ring/disk nanostructures by droplet epitaxy, J. Cryst. Growth 323, 279 (2011).
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C. Somaschini, S. Bietti, N. Koguchi, and S. Sanguinetti: Shape control via surface reconstruction kinetics of droplet epitaxy nanostructures, Appl. Phys. Lett. 97, 203109 (2010).
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C. Somaschini, S. Bietti, A. Fedorov, N. Koguchi, and S. Sanguinetti: Growth interruption effect on the fabrication of GaAs concentric multiple rings by droplet epitaxy, Nanoscale Res. Lett. 5, 1897 (2010).
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C. Somaschini, S. Bietti, A. Fedorov, N. Koguchi, and S. Sanguinetti: Concentric multiple rings by droplet epitaxy: Fabrication and study of the morphological anisotropy, Nanoscale Res. Lett. 5, 1865 (2010).
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S. Bietti, C. Somaschini, N. Koguchi, C. Frigeri, and S. Sanguinetti: Self-assembled local artificial substrates of GaAs on Si substrate, Nanoscale Res. Lett. 5, 1905 (2010).
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S. Bietti, C. Somaschini, E. Sarti, N. Koguchi, S. Sanguinetti, G. Isella, D. Chrastina, and A. Fedorov: Photoluminescence study of low thermal budget III--V nanostructures on silicon by droplet epitaxy, Nanoscale Res. Lett. 5, 1650 (2010).
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S. Bietti, C. Somaschini, S. Sanguinetti, N. Koguchi, G. Isella, D. Chrastina, and A. Fedorov: Low thermal budget fabrication of III-V quantum nanostructures on Si substrates, J. Phys. Conf. Ser. 245, 012078 (2010).
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C. Somaschini, S. Bietti, N. Koguchi, F. Montalenti, C. Frigeri, and S. Sanguinetti: Self-assembled GaAs islands on Si by droplet epitaxy, Appl. Phys. Lett. 97, 053101 (2010).
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C. Somaschini, S. Bietti, S. Sanguinetti, N. Koguchi, and A. Fedorov: Self-assembled GaAs/AlGaAs coupled quantum ring-disk structures by droplet epitaxy, Nanotechnology 21, 125601 (2010).
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S. Bietti, S. Sanguinetti, C. Somaschini, N. Koguchi, G. Isella, D. Chrastina, and A. Fedorov: Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate, IOP Conf. Ser.: Mat. Sci. Eng. 6, 012009 (2009).
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C. Somaschini, S. Bietti, S. Sanguinetti, N. Koguchi, A. Fedorov, M. Abbarchi, and M. Gurioli: Fabrication of GaAs concentric multiple quantum rings by droplet epitaxy, IOP Conf. Ser.: Mat. Sci. Eng. 6, 012008 (2009).
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S. Bietti, C. Somaschini, M. Abbarchi, N. Koguchi, S. Sanguinetti, E. Poliani, M. Bonfanti, M. Gurioli, A. Vinattieri, T. Kuroda, T. Mano, and S. Sakoda: Quantum dots to double concentric quantum ring structures transition, phys. stat. sol. (c) 6, 928 (2009).
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S. Bietti, C. Somaschini, S. Sanguinetti, N. Koguchi, G. Isella, and D. Chrastina: Fabrication of high efficiency III-V quantum nanostructures at low thermal budget on Si, Appl. Phys. Lett. 95, 241102 (2009).
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C. Somaschini, S. Bietti, N. Koguchi, and S. Sanguinetti: Fabrication of multiple concentric nanoring structures, Nano Lett. 9, 3419 (2009).
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