Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Simona Binetti

Researcher, Physics and Chemistry of Semiconductors


tel:Milano: +39 02 6448 5177
fax:Milano: +39 02 6448 5400
address:Università di Milano Bicocca
Dipartimento di Scienza dei Materiali
Via Cozzi 53
20125 Milano

Simona Binetti


Main Research Interest


  1. G. Micard, G. Hahn, B. Terheiden, D. Chrastina, G. Isella, T. Moiseev, D. Cavalcoli, A. Cavallini, S. Binetti, M. Acciarri, A. Le Donne, M. Texier, and B. Pichaud: Electrical and structural properties of p-type nanocrystalline silicon grown by LEPECVD for photovoltaic applications, phys. stat. sol. (c) 7, 712 (2010).
  2. A. L. Donne, M. Acciarri, D. Narducci, S. Marchionna, and S. Binetti: Encapsulating Eu3+ complex doped layers to improve Si-based solar cell efficiency, Prog. Photovolt: Res. Appl. 17, 519 (2009).
  3. S. Binetti, J. Libal, M. Acciarri, M. Di Sabatino, H. Nordmark, E. J. Ovrelid, J. C. Walmsley, and R. Holmestad: Study of defects and impurities in multicrystalline silicon grown from metallurgical silicon feedstock, Mat. Sci. Eng. B 159--160, 274 (2009).
  4. E. Poliani, C. Somaschini, S. Sanguinetti, E. Grilli, M. Guzzi, A. Le Donne, S. Binetti, D. Chrastina, and G. Isella: Tuning by means of laser annealing of electronic and structural properties of nc-Si/a-Si:H, Mat. Sci. Eng. B 159--160, 31 (2009).
  5. J. Libal, S. Novaglia, M. Acciarri, S. Binetti, R. Petres, J. Arumughan, R. Kopecek, and A. Prokopenko: Effect of compensation and of metallic impurities on the electrical properties of Cz-grown solar grade silicon, J. Appl. Phys. 104, 104507 (2008).
  6. S. M. Hossain, A. Anopchenko, S. Prezioso, L. Ferraioli, L. Pavesi, G. Pucker, P. Bellutti, S. Binetti, and M. Acciarri: Subband gap photoresponse of nanocrystalline silicon in a metal-oxide-semiconductor device, J. Appl. Phys. 104, 074917 (2008).
  7. A. Le Donne, S. Binetti, G. Isella, and S. Pizzini: Structural homogeneity of nc-Si films grown by Low-Energy PECVD, Electrochem. Solid St. 11, P5 (2008).
  8. A. Le Donne, S. Binetti, G. Isella, B. Pichaud, M. Texier, M. Acciarri, and S. Pizzini: Structural characterization of nc-Si films grown by low-energy PECVD on different substrates, Appl. Surf. Sci. 254, 2804 (2008).
  9. S. Binetti, M. Acciarri, and J. Libal: Impact of extended defects on the electrical properties of solar grade multicrystalline silicon for solar cell application, Solid State Phenom. 131--133, 419 (2008).
  10. A. Le Donne, S. Binetti, G. Isella, B. Pichaud, M. Texier, M. Acciarri, and S. Pizzini: Advances in structural characterization of thin film nanocrystalline silicon for photovoltaic applications, Solid State Phenom. 131--133, 33 (2008).
  11. M. Acciarri, S. Binetti, A. Le Donne, S. Marchionna, M. Vimercati, J. Libal, R. Kopecek, and K. Wambach: Effect of P-induced gettering on extended defects in n-type multicrystalline silicon, Prog. Photovolt: Res. Appl. 15, 375 (2007).
  12. S. Pizzini, S. Binetti, A. Le Donne, A. Marzegalli, and J. Rabier: Optical properties of shuffle dislocations in silicon, Appl. Phys. Lett. 88, 211910 (2006).
  13. T. Mchedlidze, S. Binetti, A. Le Donne, S. Pizzini, and M. Suezawa: Electric-dipole spin-resonance signals related to extended interstitial agglomerates in silicon, J. Appl. Phys. 98, 043507 (2005).
  14. A. Castaldini, D. Cavalcoli, A. Cavallini, S. Binetti, and S. Pizzini: Electronic transitions at defect states in Cz p-type silicon, Appl. Phys. Lett. 86, 162109 (2005).
  15. S. Binetti, A. Le Donne, and M. Acciarri: Processing step-related upgrading of silicon-based solar cells detected by photoluminescence spectroscopy, Sol. Energ. Mat. Sol. C. 86, 11 (2005).
  16. S. Binetti, M. Acciarri, M. Bollani, L. Fumagalli, H. von Känel, and S. Pizzini: Nanocrystalline silicon film grown by Low Energy Plasma Enhanced Chemical Vapor Deposition for optoelectronic applications, Thin Solid Films 487, 19 (2005).
  17. A. Le Donne, S. Binetti, and S. Pizzini: Electrical and optical characterization of electron-irradiated 4H-SiC epitaxial layers annealed at low temperature, Diam. Relat. Mater. 14, 1150 (2005).
  18. E. Leoni, L. Martinelli, S. Binetti, G. Borionetti, and S. Pizzini: The origin of photoluminescence from oxygen precipitates nucleated at low temperature in semiconductor silicon, J. Electrochem. Soc. 151, G866 (2004).
  19. A. Le Donne, S. Binetti, M. Acciarri, and S. Pizzini: Electrical characterization of electron irradiated X-rays detectors based on 4H-SiC epitaxial layers, Diam. Relat. Mater. 13, 414 (2004).
  20. S. Binetti, A. Le Donne, V. V. Emtsev, and S. Pizzini: Effect of high pressure isostatic annealing on oxygen segregation in Czochralski silicon, J. Appl. Phys. 94, 7476 (2003).
  21. D. Cavalcoli, A. Cavallini, M. Rossi, S. Binetti, F. Izzia, and S. Pizzini: Surface contaminant detection in semiconductors using noncontacting techniques, J. Electrochem. Soc. 150, G456 (2003).
  22. S. Binetti, S. Pizzini, E. Leoni, R. Somaschini, A. Castaldini, and A. Cavallini: Optical properties of oxygen precipitates and dislocations in silicon, J. Appl. Phys. 92, 2437 (2002).


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