Simona Binetti
Contact
e-mail: | |
tel: | Milano: +39 02 6448 5177 |
fax: | Milano: +39 02 6448 5400 |
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address: | Università di Milano Bicocca |
| Dipartimento di Scienza dei Materiali |
| Via Cozzi 53 |
| 20125 Milano |
| Italy |
web: | mater.unimib.it |
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Education
- PhD in Chemistry, 1998
- Masters in Material Science, 1994
- Degree in Physics at the University of Milan, 1991
Main Research Interest
Publications
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G. Micard, G. Hahn, B. Terheiden, D. Chrastina, G. Isella, T. Moiseev, D. Cavalcoli, A. Cavallini, S. Binetti, M. Acciarri, A. Le Donne, M. Texier, and B. Pichaud: Electrical and structural properties of p-type nanocrystalline silicon grown by LEPECVD for photovoltaic applications, phys. stat. sol. (c) 7, 712 (2010).
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A. L. Donne, M. Acciarri, D. Narducci, S. Marchionna, and S. Binetti: Encapsulating Eu3+ complex doped layers to improve Si-based solar cell efficiency, Prog. Photovolt: Res. Appl. 17, 519 (2009).
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S. Binetti, J. Libal, M. Acciarri, M. Di Sabatino, H. Nordmark, E. J. Ovrelid, J. C. Walmsley, and R. Holmestad: Study of defects and impurities in multicrystalline silicon grown from metallurgical silicon feedstock, Mat. Sci. Eng. B 159--160, 274 (2009).
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E. Poliani, C. Somaschini, S. Sanguinetti, E. Grilli, M. Guzzi, A. Le Donne, S. Binetti, D. Chrastina, and G. Isella: Tuning by means of laser annealing of electronic and structural properties of nc-Si/a-Si:H, Mat. Sci. Eng. B 159--160, 31 (2009).
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J. Libal, S. Novaglia, M. Acciarri, S. Binetti, R. Petres, J. Arumughan, R. Kopecek, and A. Prokopenko: Effect of compensation and of metallic impurities on the electrical properties of Cz-grown solar grade silicon, J. Appl. Phys. 104, 104507 (2008).
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S. M. Hossain, A. Anopchenko, S. Prezioso, L. Ferraioli, L. Pavesi, G. Pucker, P. Bellutti, S. Binetti, and M. Acciarri: Subband gap photoresponse of nanocrystalline silicon in a metal-oxide-semiconductor device, J. Appl. Phys. 104, 074917 (2008).
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A. Le Donne, S. Binetti, G. Isella, and S. Pizzini: Structural homogeneity of nc-Si films grown by Low-Energy PECVD, Electrochem. Solid St. 11, P5 (2008).
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A. Le Donne, S. Binetti, G. Isella, B. Pichaud, M. Texier, M. Acciarri, and S. Pizzini: Structural characterization of nc-Si films grown by low-energy PECVD on different substrates, Appl. Surf. Sci. 254, 2804 (2008).
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S. Binetti, M. Acciarri, and J. Libal: Impact of extended defects on the electrical properties of solar grade multicrystalline silicon for solar cell application, Solid State Phenom. 131--133, 419 (2008).
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A. Le Donne, S. Binetti, G. Isella, B. Pichaud, M. Texier, M. Acciarri, and S. Pizzini: Advances in structural characterization of thin film nanocrystalline silicon for photovoltaic applications, Solid State Phenom. 131--133, 33 (2008).
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M. Acciarri, S. Binetti, A. Le Donne, S. Marchionna, M. Vimercati, J. Libal, R. Kopecek, and K. Wambach: Effect of P-induced gettering on extended defects in n-type multicrystalline silicon, Prog. Photovolt: Res. Appl. 15, 375 (2007).
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S. Pizzini, S. Binetti, A. Le Donne, A. Marzegalli, and J. Rabier: Optical properties of shuffle dislocations in silicon, Appl. Phys. Lett. 88, 211910 (2006).
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T. Mchedlidze, S. Binetti, A. Le Donne, S. Pizzini, and M. Suezawa: Electric-dipole spin-resonance signals related to extended interstitial agglomerates in silicon, J. Appl. Phys. 98, 043507 (2005).
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A. Castaldini, D. Cavalcoli, A. Cavallini, S. Binetti, and S. Pizzini: Electronic transitions at defect states in Cz p-type silicon, Appl. Phys. Lett. 86, 162109 (2005).
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S. Binetti, A. Le Donne, and M. Acciarri: Processing step-related upgrading of silicon-based solar cells detected by photoluminescence spectroscopy, Sol. Energ. Mat. Sol. C. 86, 11 (2005).
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S. Binetti, M. Acciarri, M. Bollani, L. Fumagalli, H. von Känel, and S. Pizzini: Nanocrystalline silicon film grown by Low Energy Plasma Enhanced Chemical Vapor Deposition for optoelectronic applications, Thin Solid Films 487, 19 (2005).
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A. Le Donne, S. Binetti, and S. Pizzini: Electrical and optical characterization of electron-irradiated 4H-SiC epitaxial layers annealed at low temperature, Diam. Relat. Mater. 14, 1150 (2005).
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E. Leoni, L. Martinelli, S. Binetti, G. Borionetti, and S. Pizzini: The origin of photoluminescence from oxygen precipitates nucleated at low temperature in semiconductor silicon, J. Electrochem. Soc. 151, G866 (2004).
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A. Le Donne, S. Binetti, M. Acciarri, and S. Pizzini: Electrical characterization of electron irradiated X-rays detectors based on 4H-SiC epitaxial layers, Diam. Relat. Mater. 13, 414 (2004).
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S. Binetti, A. Le Donne, V. V. Emtsev, and S. Pizzini: Effect of high pressure isostatic annealing on oxygen segregation in Czochralski silicon, J. Appl. Phys. 94, 7476 (2003).
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D. Cavalcoli, A. Cavallini, M. Rossi, S. Binetti, F. Izzia, and S. Pizzini: Surface contaminant detection in semiconductors using noncontacting techniques, J. Electrochem. Soc. 150, G456 (2003).
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S. Binetti, S. Pizzini, E. Leoni, R. Somaschini, A. Castaldini, and A. Cavallini: Optical properties of oxygen precipitates and dislocations in silicon, J. Appl. Phys. 92, 2437 (2002).
Teaching
- Material Chemistry
- Laboratory of Physical Chemistry
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