Shiro Tsukamoto
Visiting Professor
Contact
e-mail: | |
tel: | Como: +39 031 332 7616 |
fax: | Como: +39 031 332 7617 |
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address: | Politecnico di Milano |
| Polo di Como |
| Via Anzani 42 |
| 22100 Como |
| Italy |
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office: | Via Anzani 1.03 |
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Main Research Interest
Publications
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F. Cesura, S. Vichi, A. Tuktamyshev, S. Bietti, A. Fedorov, S. Sanguinetti, K. Iizuka, and S. Tsukamoto: Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling, J. Cryst. Growth 630, 127588 (2024).
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A. Tuktamyshev, S. Vichi, F. Cesura, A. Fedorov, S. Bietti, D. Chrastina, S. Tsukamoto, and S. Sanguinetti: Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control, J. Cryst. Growth 600, 126906 (2022).
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A. Tuktamyshev, A. Fedorov, S. Bietti, S. Vichi, K. D. Zeuner, K. D. Jöns, D. Chrastina, S. Tsukamoto, V. Zwiller, M. Gurioli, and S. Sanguinetti: Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates, Appl. Phys. Lett. 118, 133102 (2021).
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M. Azadmand, E. Bonera, D. Chrastina, S. Bietti, S. Tsukamoto, R. Nötzel, and S. Sanguinetti: Raman spectroscopy of epitaxial InGaN/Si in the central composition range, Jpn. J. Appl. Phys. 58, SC1020 (2019).
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M. Azadmand, L. Barabani, S. Bietti, D. Chrastina, E. Bonera, M. Acciarri, A. Fedorov, S. Tsukamoto, R. Nötzel, and S. Sanguinetti: Droplet controlled growth dynamics in molecular beam epitaxy of nitride semiconductors, Sci. Reports 8, 11278 (2018).
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