L-NESS

Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Shiro Tsukamoto

Visiting Professor

Contact

e-mail:
tel:Como: +39 031 332 7616
fax:Como: +39 031 332 7617
address:Politecnico di Milano
Polo di Como
Via Anzani 42
22100 Como
Italy
office:Via Anzani 1.03

Shiro Tsukamoto

Main Research Interest

Publications

  1. F. Cesura, S. Vichi, A. Tuktamyshev, S. Bietti, A. Fedorov, S. Sanguinetti, K. Iizuka, and S. Tsukamoto: Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling, J. Cryst. Growth 630, 127588 (2024).
  2. A. Tuktamyshev, S. Vichi, F. Cesura, A. Fedorov, S. Bietti, D. Chrastina, S. Tsukamoto, and S. Sanguinetti: Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control, J. Cryst. Growth 600, 126906 (2022).
  3. A. Tuktamyshev, A. Fedorov, S. Bietti, S. Vichi, K. D. Zeuner, K. D. Jöns, D. Chrastina, S. Tsukamoto, V. Zwiller, M. Gurioli, and S. Sanguinetti: Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates, Appl. Phys. Lett. 118, 133102 (2021).
  4. M. Azadmand, E. Bonera, D. Chrastina, S. Bietti, S. Tsukamoto, R. Nötzel, and S. Sanguinetti: Raman spectroscopy of epitaxial InGaN/Si in the central composition range, Jpn. J. Appl. Phys. 58, SC1020 (2019).
  5. M. Azadmand, L. Barabani, S. Bietti, D. Chrastina, E. Bonera, M. Acciarri, A. Fedorov, S. Tsukamoto, R. Nötzel, and S. Sanguinetti: Droplet controlled growth dynamics in molecular beam epitaxy of nitride semiconductors, Sci. Reports 8, 11278 (2018).

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