Maurizio Acciarri
Contact
e-mail: | |
tel: | Milano: +39 02 6448 5136 |
fax: | Milano: +39 02 6448 5400 |
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address: | Università di Milano Bicocca |
| Dipartimento di Scienza dei Materiali |
| Via Cozzi 53 |
| 20125 Milano |
| Italy |
web: | mater.unimib.it |
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Education
- Specialization in science and technology of materials, Milan, 1993
- Degree in Physics, Milan, 1990
Main Research Interest
Publications
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M. Azadmand, L. Barabani, S. Bietti, D. Chrastina, E. Bonera, M. Acciarri, A. Fedorov, S. Tsukamoto, R. Nötzel, and S. Sanguinetti: Droplet controlled growth dynamics in molecular beam epitaxy of nitride semiconductors, Sci. Reports 8, 11278 (2018).
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G. Micard, G. Hahn, B. Terheiden, D. Chrastina, G. Isella, T. Moiseev, D. Cavalcoli, A. Cavallini, S. Binetti, M. Acciarri, A. Le Donne, M. Texier, and B. Pichaud: Electrical and structural properties of p-type nanocrystalline silicon grown by LEPECVD for photovoltaic applications, phys. stat. sol. (c) 7, 712 (2010).
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A. L. Donne, M. Acciarri, D. Narducci, S. Marchionna, and S. Binetti: Encapsulating Eu3+ complex doped layers to improve Si-based solar cell efficiency, Prog. Photovolt: Res. Appl. 17, 519 (2009).
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J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri, and H. von Känel: Ultra low dark current Ge/Si(100) photodiodes with low thermal budget, Appl. Phys. Lett. 94, 201106 (2009).
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S. Binetti, J. Libal, M. Acciarri, M. Di Sabatino, H. Nordmark, E. J. Ovrelid, J. C. Walmsley, and R. Holmestad: Study of defects and impurities in multicrystalline silicon grown from metallurgical silicon feedstock, Mat. Sci. Eng. B 159--160, 274 (2009).
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J. Libal, S. Novaglia, M. Acciarri, S. Binetti, R. Petres, J. Arumughan, R. Kopecek, and A. Prokopenko: Effect of compensation and of metallic impurities on the electrical properties of Cz-grown solar grade silicon, J. Appl. Phys. 104, 104507 (2008).
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S. M. Hossain, A. Anopchenko, S. Prezioso, L. Ferraioli, L. Pavesi, G. Pucker, P. Bellutti, S. Binetti, and M. Acciarri: Subband gap photoresponse of nanocrystalline silicon in a metal-oxide-semiconductor device, J. Appl. Phys. 104, 074917 (2008).
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A. Le Donne, S. Binetti, G. Isella, B. Pichaud, M. Texier, M. Acciarri, and S. Pizzini: Structural characterization of nc-Si films grown by low-energy PECVD on different substrates, Appl. Surf. Sci. 254, 2804 (2008).
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S. Binetti, M. Acciarri, and J. Libal: Impact of extended defects on the electrical properties of solar grade multicrystalline silicon for solar cell application, Solid State Phenom. 131--133, 419 (2008).
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A. Le Donne, S. Binetti, G. Isella, B. Pichaud, M. Texier, M. Acciarri, and S. Pizzini: Advances in structural characterization of thin film nanocrystalline silicon for photovoltaic applications, Solid State Phenom. 131--133, 33 (2008).
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M. Acciarri, S. Binetti, A. Le Donne, S. Marchionna, M. Vimercati, J. Libal, R. Kopecek, and K. Wambach: Effect of P-induced gettering on extended defects in n-type multicrystalline silicon, Prog. Photovolt: Res. Appl. 15, 375 (2007).
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M. Acciarri, S. Binetti, M. Bollani, A. Comotti, L. Fumagalli, S. Pizzini, and H. von Känel: Nanocrystalline silicon film grown by LEPECVD for photovoltaic applications, Sol. Energ. Mat. Sol. C. 87, 11 (2005).
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S. Binetti, A. Le Donne, and M. Acciarri: Processing step-related upgrading of silicon-based solar cells detected by photoluminescence spectroscopy, Sol. Energ. Mat. Sol. C. 86, 11 (2005).
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S. Binetti, M. Acciarri, M. Bollani, L. Fumagalli, H. von Känel, and S. Pizzini: Nanocrystalline silicon film grown by Low Energy Plasma Enhanced Chemical Vapor Deposition for optoelectronic applications, Thin Solid Films 487, 19 (2005).
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A. Le Donne, S. Binetti, M. Acciarri, and S. Pizzini: Electrical characterization of electron irradiated X-rays detectors based on 4H-SiC epitaxial layers, Diam. Relat. Mater. 13, 414 (2004).
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M. Acciarri, C. Cirelli, S. Pizzini, S. Binetti, A. Castaldini, and A. Cavallini: Study of the correlation between radiative and non-radiative recombination channels in silicon, J. Phys. Condens. Matt. 14, 13223 (2002).
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M. Acciarri, S. Pizzini, G. Simone, D. Jones, and V. Palermo: Advances in silicon surface characterisation using light beam injection techniques, Mat. Sci. Eng. B 73, 235 (2000).
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S. Pizzini, M. Acciarri, E. Leoni, and A. Le Donne: About the D1 and D2 dislocation luminescence and its correlation with oxygen segregation, phys. stat. sol. (b) 222, 141 (2000).
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M. Acciarri, S. Binetti, M. Garavaglia, and S. Pizzini: Detection of junction failures and other defects in silicon and III-V devices using the LBIC technique in lateral configuration, Mat. Sci. Eng. B 42, 208 (2000).
Teaching
- Course of Physics II for the degree in Scienze e Tecnologie Orafe
- Laboratory of Physics of the Semiconductors for the Physics degree
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