Emanuele Grilli
Associate professor
Contact
e-mail: | |
tel: | Milano: +39 02 6448 5156 |
fax: | Milano: +39 02 6448 5400 |
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address: | Università di Milano Bicocca |
| Dipartimento di Scienza dei Materiali |
| Via Cozzi 53 |
| 20125 Milano |
| Italy |
web: | mater.unimib.it |
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Main Research Interest
Publications
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A. Giorgioni, S. Paleari, S. Cecchi, E. Vitiello, E. Grilli, G. Isella, W. Jantsch, M. Fanciulli, and F. Pezzoli: Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells.Nature Communications 7, 13886 (2016).
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F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, and L. Miglio: Disentangling nonradiative recombination processes in ge micro-crystals on Si substrates, Appl. Phys. Lett. 108, 262103 (2016).
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T. Etzelstorfer, M. R. Ahmadpor Monazam, S. Cecchi, D. Kriegner, D. Chrastina, E. Gatti, E. Grilli, N. Rosemann, S. Chatterjee, V. Holý, F. Pezzoli, G. Isella, and J. Stangl: Structural investigations of the α12 Si-Ge superstructure, J. Appl. Cryst. 48, 262 (2015).
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E. Gatti, F. Isa, D. Chrastina, E. Müller Gubler, F. Pezzoli, E. Grilli, and G. Isella: Ge/SiGe quantum wells on Si(111): Growth, structural and optical properties, J. Appl. Phys. 116, 043518 (2014).
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F. Pezzoli, F. Isa, G. Isella, C. V. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Känel, and L. Miglio: Ge crystals on Si show their light, Phys. Rev. App. 1, 044005 (2014).
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E. Gatti, A. Giorgioni, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, A. Chernikov, K. Kolata, V. Bornwasser, N. S. Köster, R. Woscholski, and S. Chatterjee: Relaxation and recombination processes in Ge/SiGe multiple quantum wells, AIP Conf. Proc. 1566, 470 (2013).
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E. Bonera, R. Gatti, G. Isella, G. Norga, A. Picco, E. Grilli, M. Guzzi, M. Texier, and B. Pichaud: Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor, Appl. Phys. Lett. 103, 053104 (2013).
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F. Pezzoli, L. Qing, A. Giorgioni, G. I. E. Grilli, M. Guzzi, and H. Dery: Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence, Phys. Rev. B 88, 045204 (2013).
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F. Pezzoli, F. Isa, G. Isella, C. V. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Känel, and L. Miglio: Germanium crystals on silicon show their light, arXiv.org e-Print archive cond-mat, arXiv:1306.5270 (2013).
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G. Isella, F. Bottegoni, S. Cecchi, A. Ferrari, F. Ciccacci, F. Pezzoli, A. Giorgioni, E. Gatti, E. Grilli, M. Guzzi, C. Lange, N. S. Köster, R. Woscholski, S. Chatterjee, D. Trivedi, P. Li, Y. Song, , and H. Dery: Optical spin orientation in SiGe heterostructures, ECS Transactions 50, 831 (2013).
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S. Bietti, S. Cecchi, C. Frigeri, E. Grilli, A. Fedorov, A. Vinattieri, M. Gurioli, G. Isella, and S. Sanguinetti: Fabrication of Ge-on-Si substrates for the integration of high-quality GaAs nanostructures on Si, ECS Transactions 50, 783 (2013).
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A. Giorgioni, F. Pezzoli, E. Gatti, S. Cecchi, C. K. Inoki, C. Deneke, E. Grilli, G. Isella, and M. Guzzi: Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells, Appl. Phys. Lett. 102, 012408 (2013).
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A. Picco, E. Bonera, F. Pezzoli, E. Grilli, O. G. Schmidt, F. Isa, S. Cecchi, and M. Guzzi: Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy, Nanoscale Res. Lett. 7, 633 (2012).
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L. Cavigli, S. Bietti, M. Abbarchi, C. Somaschini, A. Vinattieri, M. Gurioli, A. Fedorov, G. Isella, E. Grilli, and S. Sanguinetti: Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si, J. Phys. Condens. Matt. 24, 104017 (2012).
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F. Pezzoli, F. Bottegoni, D. Trivedi, F. Ciccacci, A. Giorgioni, P. Li, S. Cecchi, E. Grilli, Y. Song, M. Guzzi, H. Dery, and G. Isella: Optical spin injection and spin lifetime in Ge heterostructures, Phys. Rev. Lett. 108, 156603 (2012).
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A. Giorgioni, E. Gatti, E. Grilli, A. Chernikov, S. Chatterjee, D. Chrastina, G. Isella, and M. Guzzi: Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells, J. Appl. Phys. 111, 013501 (2012).
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G. Isella, F. Bottegoni, F. Pezzoli, S. Cecchi, E. Gatti, D. Chrastina, E. Grilli, M. Guzzi, and F. Ciccacci: Optical spin injection in SiGe heterostructures.In H.-J. M. Drouhin, J.-E. Wegrowe, and M. Razeghi (eds.), Spintronics IV, volume Proc. SPIE 8100, 810007 (2011).
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E. Gatti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, A. Chernikov, V. Bornwasser, N. Köster, R. Woscholski, and S. Chatterjee: Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells, Phys. Rev. B 84, 245319 (2011).
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E. Gatti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, and H. von Känel: Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers, Appl. Phys. Lett. 98, 031106 (2011).
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A. Picco, E. Bonera, E. Grilli, M. Guzzi, M. Giarola, G. Mariotto, D. Chrastina, and G. Isella: Raman efficiency in SiGe alloys, Phys. Rev. B 82, 115317 (2010).
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A. Picco, E. Bonera, E. Grilli, M. Guzzi, M. Giarola, G. Mariotto, and D. Chrastina: Determination of Raman efficiency in SiGe alloys, AIP Conf. Proc. 1267, 251 (2010).
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E. Bonera, F. Pezzoli, A. Picco, G. Vastola, M. Stoffel, E. Grilli, M. Guzzi, A. Rastelli, O. G. Schmidt, and L. Miglio: Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations, Phys. Rev. B 79, 075321 (2009).
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M. Bonfanti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, H. von Känel, and H. Sigg: Direct-gap related optical transitions in Ge/SiGe quantum wells with Ge-rich barriers, Physica E 41, 972 (2009).
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F. Pezzoli, E. Bonera, M. Bollani, S. Sanguinetti, E. Grilli, M. Guzzi, G. Isella, D. Chrastina, and H. von Känel: Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers, Acta Phys. Pol. A 116, 78 (2009).
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E. Poliani, C. Somaschini, S. Sanguinetti, E. Grilli, M. Guzzi, A. Le Donne, S. Binetti, D. Chrastina, and G. Isella: Tuning by means of laser annealing of electronic and structural properties of nc-Si/a-Si:H, Mat. Sci. Eng. B 159--160, 31 (2009).
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A. Trita, F. Bragheri, I. Cristiani, V. Degiorgio, D. Chrastina, D. Colombo, G. Isella, H. von Känel, F. Gramm, E. Müller, M. Döbeli, E. Bonera, R. Gatti, F. Pezzoli, E. Grilli, M. Guzzi, and L. Miglio: Impact of misfit dislocations on wavefront distortion in Si/SiGe/Si optical waveguides, Opt. Commun. 282, 4716 (2009).
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M. Virgilio, M. Bonfanti, D. Chrastina, A. Neels, G. Isella, E. Grilli, M. Guzzi, G. Grosso, H. Sigg, and H. von Känel: Polarization-dependent absorption in Ge/SiGe multiple quantum wells: theory and experiment, Phys. Rev. B 79, 075323 (2009).
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M. Bonfanti, E. Grilli, M. Guzzi, M. Virgilio, G. Grosso, D. Chrastina, G. Isella, H. von Känel, and A. Neels: Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers, Phys. Rev. B 78, 041407(R) (2008).
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D. Chrastina, A. Neels, M. Bonfanti, M. Virgilio, G. Isella, E. Grilli, M. Guzzi, G. Grosso, H. Sigg, and H. von Känel: Ge/SiGe multiple quantum wells for optical applications.In IEEE 5th Int. Conf. Group IV Photonics, 194--196 (2008).
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F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, and G. Bauer: Phonon strain shift coefficients in Si1-xGex alloys, J. Appl. Phys. 103, 093521 (2008).
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F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, and G. Bauer: Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures, Mat. Sci. Semicond. Process. 11, 279 (2008).
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S. Sanguinetti, T. Mano, A. Gerosa, C. Somaschini, S. Bietti, N. Koguchi, E. Grilli, M. Guzzi, M. Gurioli, and M. Abbarchi: Rapid thermal annealing effects on self-assembled quantum dot and quantum ring structures, J. Appl. Phys. 104, 113519 (2008).
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D. Colombo, E. Grilli, M. Guzzi, S. Sanguinetti, S. Marchionna, M. Bonfanti, A. Fedorov, H. von Känel, G. Isella, and E. Müller: Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates, J. Appl. Phys. 101, 103519 (2007).
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F. Pezzoli, S. Sanguinetti, E. Bonera, E. Grilli, and M. Guzzi: Modelling of the phonon strain shift coefficients in Si1-xGex alloys, J. Phys. Conf. Ser. 92, 012152 (2007).
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D. Colombo, E. Grilli, M. Guzzi, S. Sanguinetti, A. Fedorov, H. von Känel, and G. Isella: Study of thermal strain relaxation in GaAs grown on Ge/Si substrates, J. Lumin. 121, 375 (2006).
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F. Pezzoli, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, and G. Bauer: Strain-induced shift of phonon modes in Si1-xGex alloys, Mat. Sci. Semicond. Process. 9, 541 (2006).
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S. Pizzini, M. Acciarri, S. Binetti, D. Cavalcoli, A. Cavallini, D. Chrastina, L. Colombo, E. Grilli, G. Isella, M. Lancin, A. Le Donne, A. Mattoni, K. Peter, B. Pichaud, E. Poliani, M. Rossi, S. Sanguinetti, M. Texier, and H. von Känel: Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications, Mat. Sci. Eng. B 134, 118 (2006).
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F. Pezzoli, L. Martinelli, E. Grilli, M. Guzzi, S. Sanguinetti, M. Bollani, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, and G. Bauer: Raman spectroscopy of Si1-xGex epilayers, Mat. Sci. Eng. B 124--125, 127 (2005).
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V. Mantovani, S. Sanguinetti, M. Guzzi, E. Grilli, M. Gurioli, K. Watanabe, and N. Koguchi: Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy, Physica E 23, 377 (2004).
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D. Colombo, S. Sanguinetti, E. Grilli, M. Guzzi, L. Martinelli, M. Gurioli, P. Frigeri, G. Trevisi, and S. Franchi: Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer, J. Appl. Phys. 94, 6513 (2003).
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L. Martinelli, E. Grilli, M. Guzzi, and M. G. Grimaldi: Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon, Appl. Phys. Lett. 83, 794 (2003).
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L. Martinelli, E. Grilli, D. B. Migas, L. Miglio, F. Marabelli, C. Soci, M. Geddo, M. G. Grimaldi, and C. Spinella: Luminescence from β-FeSi2 precipitates in Si. II: Origin and nature of the photoluminescence, Phys. Rev. B 66, 085320 (2002).
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S. Sanguinetti, M. Gurioli, E. Grilli, M. Guzzi, and M. Henini: Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates, Appl. Phys. Lett. 77, 1982 (2000).
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S. Sanguinetti, M. Padovani, M. Gurioli, E. Grilli, M. Guzzi, A. Vinattieri, M. Colocci, P. Frigeri, and S. Franchi: Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots, Appl. Phys. Lett. 77, 1307 (2000).
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S. Sanguinetti, S. C. Fortina, A. Miotto, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, and L. Eaves: Self-aggregation of InAs quantum dots on ( N11) GaAs substrates.Thin Solid Films 336, 9 (1998).
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A. Bignazzi, E. Grilli, M. Guzzi, C. Bocchi, A. Bosacchi, S. Franchi, and R. Magnanini: Direct- and indirect-energy-gap dependence on Al concentration in AlxGa1-xSb ( x < ~0.41).Phys. Rev. B 57, 2295 (1998).
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L. Brusaferri, S. Sanguinetti, E. Grilli, M. Guzzi, A. Bignazzi, F. Bogani, L. Carraresi, M. Colocci, A. Bosacchi, P. Frigeri, and S. Franchi: Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots, Appl. Phys. Lett. 69, 3354 (1996).
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M. Henini, S. Sanguinetti, S. C. Fortina, E. Grilli, M. Guzzi, G. Panzarini, L. C. Andreani, M. D. Upward, P. Moriarty, P. H. Beton, and L. Eaves: Optical anisotropy in arrow-shaped InAs quantum dots, Phys. Rev. B 57, R6815 (1998).
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P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, and M. Guzzi: Room-temperature visible luminescence from silicon nanocrystals in silicon implanted SiO2 layers, Appl. Phys. Lett. 66, 851 (1995).
Teaching
- 2002/03 teacher of Solid state optical spectroscopy and of Laboratory of solids for the IV year of the degree in physics
- 2003/04 e 2004/05 teacher of Solid state optical spectroscopy and of Laboratory of solid state for the first year of the second cycle degree in physics
- 2002/03-2004/05 teacher of laboratory for the course Physics and his method for the first year of the specialization school for secondary school teachers
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