Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

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Affiliated Institutions

• Polo di Como
• Politecnico di Milano
• Università Milano Bicocca

Dario Narducci

Assistant professor

Contact e-mail: tel: Milano: +39 02 6448 5137 fax: Milano: +39 02 6448 5400 address: Università di Milano Bicocca Dipartimento di Scienza dei Materiali Via Cozzi 53 20125 Milano Italy web: mater.unimib.it

Education

• PhD in Chemical Sciences, Milan, 1989
• Degree in Chemistry at the University of Milan, 1984

Main Research Interest

• Physical chemistry of solids and materials
• Disordered materials (amorphous solids and polycrystalline silicon)
• Surface physical chemistry (physical chemistry of oxides and their surfaces, chemical reconstruction of single-crystal Si surfaces, analysis the mechanism of self-assembling of organic molecules onto silicon, modelling of gas-surface supramolecular interactions)
• Applicative and technological issues (chemical sensors, analysis and development of chemical etch processes for microelectronics, CVD techniques).

Publications

1. A. L. Donne, M. Acciarri, D. Narducci, S. Marchionna, and S. Binetti: Encapsulating Eu³⁺ complex doped layers to improve Si-based solar cell efficiency, Prog. Photovolt: Res. Appl. 17, 519 (2009).
2. G. F. Cerofolini, A. Giussani, A. Modelli, D. Mascolo, D. Ruggiero, D. Narducci, and E. Romano: Chemical, energetic, and geometric heterogeneity of device-quality (100) surfaces of single crystalline silicon after HF_aq etching, Appl. Surf. Sci. 254, 5781 (2008).
3. M. Bollani, R. Piagge, and D. Narducci: Modulation of Si(100) electronic surface density due to supramolecular interactions of gaseous molecules with self-assembled organic monolayers, Mat. Sci. Eng. C 15, 253 (2001).
4. M. Bollani, R. Piagge, A. Charaï, and D. Narducci: Experimental evidence and computational analysis of the electronic density modulation induced by gaseous molecules at Si(001) surfaces upon self-assembling organic monolayer, Appl. Surf. Sci. 175--176, 379 (2001).
5. M. Bollani, M. Portail, J.-M. Layet, A. Charaï, and D. Narducci: Final evidence for H termination of HF-treated Si surfaces: a comparative study by high-energy and vibrational spectroscopies, Mat. Sci. Eng. B 73, 240 (2000).
6. M. Bollani, L. Fares, A. Charaï, and D. Narducci: Chemically induced disordering of Si (100) surfaces upon SC1/SC2 etching analysed by high-resolution transmission electron microscopy, Mat. Sci. Eng. B 73, 154 (2000).
7. C. Alfonso, A. Charaï, A. Armigliato, and D. Narducci: Transmission electron microscopy investigation of tin sub-oxide nucleation upon SnO₂ deposition on silicon, Appl. Phys. Lett. 68, 1207 (1996).
8. D. Narducci, C. R. Guarnieri, and J. J. Cuomo: Defect clustering and boron electrical deactivation in p-doped polycrystalline diamond films, J. Electrochem. Soc. 138, 2446 (1991).
9. D. Narducci and J. J. Cuomo: Boron diffusivity in nonimplanted diamond single crystals measured by impedance spectroscopy, J. Appl. Phys. 68, 1184 (1990).
10. S. Pizzini, N. Buttá, D. Narducci, and M. Palladino: Thick film ZnO resistive gas sensors, J. Electrochem. Soc. 136, 1945 (1989).

Teaching

• Surface and Solid State Physical Chemistry, Master Degree in Materials Science
• Physical Chemistry II (1st module), Degree in Chemistry (2nd year)
• Advanced Physical Chemistry (2nd module), Master Degree in Chemistry (1st year)
• Laboratory ogìf Materials Technology II, Degree in Materials Science (3rd year)
• Chemical Education, Degree in Primary School Education Science