Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Dario Narducci

Assistant professor


tel:Milano: +39 02 6448 5137
fax:Milano: +39 02 6448 5400
address:Università di Milano Bicocca
Dipartimento di Scienza dei Materiali
Via Cozzi 53
20125 Milano

Dario Narducci


Main Research Interest


  1. A. L. Donne, M. Acciarri, D. Narducci, S. Marchionna, and S. Binetti: Encapsulating Eu3+ complex doped layers to improve Si-based solar cell efficiency, Prog. Photovolt: Res. Appl. 17, 519 (2009).
  2. G. F. Cerofolini, A. Giussani, A. Modelli, D. Mascolo, D. Ruggiero, D. Narducci, and E. Romano: Chemical, energetic, and geometric heterogeneity of device-quality (100) surfaces of single crystalline silicon after HFaq etching, Appl. Surf. Sci. 254, 5781 (2008).
  3. M. Bollani, R. Piagge, and D. Narducci: Modulation of Si(100) electronic surface density due to supramolecular interactions of gaseous molecules with self-assembled organic monolayers, Mat. Sci. Eng. C 15, 253 (2001).
  4. M. Bollani, R. Piagge, A. Charaï, and D. Narducci: Experimental evidence and computational analysis of the electronic density modulation induced by gaseous molecules at Si(001) surfaces upon self-assembling organic monolayer, Appl. Surf. Sci. 175--176, 379 (2001).
  5. M. Bollani, M. Portail, J.-M. Layet, A. Charaï, and D. Narducci: Final evidence for H termination of HF-treated Si surfaces: a comparative study by high-energy and vibrational spectroscopies, Mat. Sci. Eng. B 73, 240 (2000).
  6. M. Bollani, L. Fares, A. Charaï, and D. Narducci: Chemically induced disordering of Si (100) surfaces upon SC1/SC2 etching analysed by high-resolution transmission electron microscopy, Mat. Sci. Eng. B 73, 154 (2000).
  7. C. Alfonso, A. Charaï, A. Armigliato, and D. Narducci: Transmission electron microscopy investigation of tin sub-oxide nucleation upon SnO2 deposition on silicon, Appl. Phys. Lett. 68, 1207 (1996).
  8. D. Narducci, C. R. Guarnieri, and J. J. Cuomo: Defect clustering and boron electrical deactivation in p-doped polycrystalline diamond films, J. Electrochem. Soc. 138, 2446 (1991).
  9. D. Narducci and J. J. Cuomo: Boron diffusivity in nonimplanted diamond single crystals measured by impedance spectroscopy, J. Appl. Phys. 68, 1184 (1990).
  10. S. Pizzini, N. Buttá, D. Narducci, and M. Palladino: Thick film ZnO resistive gas sensors, J. Electrochem. Soc. 136, 1945 (1989).


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