L-NESS

Laboratory for Epitaxial Nanostructures on Silicon and Spintronics

Affiliated Institutions

Andrea Scaccabarozzi

PhD student

Contact

e-mail:
tel:Como: +39 031 332 7627
tel:Milano: +39 02 6448 5168
fax:Como: +39 031 332 7617
address:Politecnico di Milano
Polo di Como
Via Anzani 42
22100 Como
Italy
office:Via Anzani 1.03
address:Dipartimento di Scienza dei Materiali
Università di Milano Bicocca
Via Cozzi 53
20125 Milano
Italy

Andrea Scaccabarozzi

Main Research Interest

Publications

  1. R. Bergamaschini, S. Bietti, A. Castellano, C. Frigeri, C. V. Falub, A. Scaccabarozzi, M. Bollani, H. von Känel, L. Miglio, and S. Sanguinetti: Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars, J. Appl. Phys. 120, 245702 (2016).
  2. R. Bergamaschini, M. Salvalaglio, A. Scaccabarozzi, F. Isa, C. V. Falub, G. Isella, H. von Känel, F. Montalenti, and L. Miglio: Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates, J. Cryst. Growth 440, 86 (2016).
  3. S. Bietti, A. Scaccabarozzi, C. Frigeri, M. Bollani, E. Bonera, C. V. Falub, H. von Känel, L. Miglio, and S. Sanguinetti: Monolithic integration of optical grade GaAs on Si(001) substrates deeply patterned at a micron scale, Appl. Phys. Lett. 103, 262106 (2013).

Copyright © 2010 L-NESS Como

Last updated: 25th May 2017